PTF080101 pdf, PTF080101 상세설명, PTF080101 데이터시트, PTF080101 view ::: ALLDATASHEET :::

부품명	PTF080101

상세설명	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

파일 크기	64.14 Kbytes

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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유사한 부품 번호 - PTF080101

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18
Infineon Technologies A...	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05

제조업체	부품명	데이터시트	상세설명
Ericsson	PTF10100	163Kb / 6P	165 Watts, 860-900 MHz LDMOS Field Effect Transistor
Infineon Technologies A...	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05
	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
	PXAC243502FV	1Mb / 10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PTFB183408SV	248Kb / 15P	High Power RF LDMOS Field Effect Transistor Rev. 03, 2014-03-07
	PTFB201402FC	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
Renesas Technology Corp	NEM090303M-28	295Kb / 12P	LDMOS FIELD EFFECT TRANSISTOR 2003
	NEM090603M-28	302Kb / 11P	LDMOS FIELD EFFECT TRANSISTOR 2006
	NEM090853P-28	283Kb / 10P	LDMOS FIELD EFFECT TRANSISTOR 2004
	NEM091803S-28	271Kb / 9P	LDMOS FIELD EFFECT TRANSISTOR 2004