| 전자부품 데이터시트 검색엔진 |
|
50N06G-TND-R 판매업체 |
| 판매업체 | 부품명 | 제조업체 | 상세설명 | Price | Qty. BuyNow | |
![]() DigiKey | 50N06NF | Goodwork Semiconductor Co Ltd | 60V 50A 11m@10V DFN-8L(5x6) |
| 30,000 | |
| 50N06(TO-252) | Goodwork Semiconductor Co Ltd | 60V 45A 11m@10V TO-252 |
| 30,000 | ||
IPD350N06LGBTMA1![]() | Infineon Technologies AG | MOSFET N-CH 60V 29A TO252-3 RoHS : Compliant |
| 10,337 | ||
IPD350N06LGBTMA1![]() | Infineon Technologies AG | MOSFET N-CH 60V 29A TO252-3 RoHS : Compliant |
| 10,337 | ||
| RF1S50N06LE | Rochester Electronics LLC | N-CHANNEL POWER MOSFET |
| 4,042 | ||
| 23EZS0450N0625 | Essentra Components | CBL CLIP TWIST LOCK NAT PUSH IN |
| 4,000 | ||
| MOT50N06D | Advanced Fiber Resources (Wuhan) Ltd | MOSFET N-CH 60V 50A 13m To-252 |
| 2,500 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | MOSFET N-CH 55V 50A TO252-31 RoHS : Compliant |
| 1,754 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 846 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 846 | ||
| RF1S50N06SM9AS2551 | Rochester Electronics LLC | MOSFET 60V 50A |
| 653 | ||
| 50M100150N060B | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 THR |
| 500 | ||
| 050N0600A06441010N0001 | KORATECH | 50N*600mm*0.5P*(4/4/10/10)*P6 |
| 500 | ||
IPD350N06LGBTMA1![]() | Infineon Technologies AG | MOSFET N-CH 60V 29A TO252-3 RoHS : Compliant |
| 337 | ||
| 50N06 | UMW | TO-252 MOSFETS ROHS |
| 0 | ||
![]() Avnet Americas | RFP50N06 | onsemi | N-Channel Power MOSFET 60V, 50A, 22mO - Rail/Tube (Alt: RFP50N06) RoHS : Compliant |
| 30 | |
| FQB50N06LTM | onsemi | Power MOSFET, N-Channel, Logic Level, QFET?, 60 V, 52.4 A, 21 m?, D2PAK - Tape and Reel (Alt: FQB50N06LTM) RoHS : Compliant |
| 0 | ||
| RFP50N06 | onsemi | N-Channel Power MOSFET 60V, 50A, 22mO - Bulk (Alt: 58K9518) RoHS : Compliant |
| 0 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | Power MOSFET, N Channel, 55 V, 50 A, 0.0108 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD50N06S214ATMA2) RoHS : Compliant |
| 0 | ||
| SQD50N06-09L-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SQD50N06-09L-GE3) RoHS : Compliant | 0 | |||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SQD50N06-09L_GE3) RoHS : Compliant |
| 0 | ||
| WMG50N06B2ST | WeEn Semiconductor Co Ltd | WMG50N06B2S/WeEnPACK-B2,WeEnPACK-B2/STANDARD MARKING*TRAY PACK,EPE OR BLISTER/12NC: 934074389300 - Trays (Alt: WMG50N06B2ST) RoHS : Not Compliant |
| 0 | ||
| IPD350N06LGATMA1 | Infineon Technologies AG | IPD350N06LGATMA1 - Tape and Reel (Alt: IPD350N06LGATMA1) RoHS : Not Compliant | 0 | |||
| TSM850N06CX RFG | Taiwan Semiconductor | - Tape and Reel (Alt: TSM850N06CX RFG) RoHS : Compliant |
| 0 | ||
| D650N06TXPSA1 | Infineon Technologies AG | Rectifier Diode (non Schottky) 600V 650A 2-Pin BG-D4214K0-1 Tray - Trays (Alt: D650N06TXPSA1) RoHS : Compliant | 0 | |||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS : Compliant |
| 0 | ||
| SGM41100-450N06YUDT6G/TR | SG Micro Corp | - Tape and Reel (Alt: SGM41100-450N06YUDT6G/TR) RoHS : Not Compliant |
| 0 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Power MOSFET, N Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: IPD50N06S4L12ATMA2) RoHS : Compliant |
| 0 | ||
| WMG150N06B2ST | WeEn Semiconductor Co Ltd | WMG150N06B2S/WeEnPACK-B2,WeEnPACK-B2/STANDARD MARKING*TRAY PACK,EPE OR BLISTER/12NC: 934074386300 - Trays (Alt: WMG150N06B2ST) RoHS : Not Compliant |
| 0 | ||
| WMHG150N06B2S-BT | WeEn Semiconductor Co Ltd | WMHG150N06B2S-B/WEENPACK-B2/STANDARD MARKING*TRAY PACK,EPE OR BLISTER - Trays (Alt: WMHG150N06B2S-BT) RoHS : Not Compliant |
| 0 | ||
![]() Newark | IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 175DEG C, 136W; RoHS : Compliant |
| 5,861 | |
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 175DEG C, 136W; RoHS : Compliant |
| 5,861 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 50A, TO-252; RoHS : Compliant |
| 4,215 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | MOSFET, N-CH, 55V, 50A, TO-252; RoHS : Compliant |
| 4,215 | ||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | MOSFET N-CH 60V 50A DPAK AEC-Q101; RoHS : Compliant |
| 3,695 | ||
| DI050N06D1-AQ | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 2,200 | ||
| DI050N06D1-AQ | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 2,200 | ||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S) 175C MOSFET; RoHS : Compliant |
| 2,000 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q100, N-CH, 60V, TO-252; RoHS : Compliant |
| 1,900 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET, AEC-Q100, N-CH, 60V, TO-252; RoHS : Compliant |
| 1,900 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 1,285 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET, N-CHANNEL, 65V, 50A, TO-252AA; RoHS : Compliant |
| 1,285 | ||
| RFP50N06 | onsemi | MOSFET Transistor, N Channel, 50 A, 60 V; RoHS : Compliant |
| 913 | ||
| RFP50N06 | onsemi | N CHANNEL MOSFET, 60V, 50A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes RoHS : Compliant |
| 772 | ||
| DIT050N06 | Diotec Semiconductor AG | MOSFET, N-CH, 60V, 50A, TO-220AB-3; RoHS : Compliant |
| 20 | ||
![]() RS | VHS50-N06B-Z | SMC Corporation of America | MANUAL VALVE, AIR PRESSURE RELIEF, 3/4NPTF, 3 PORT, 1 MPA, VHS SERIES |
| 19 | |
| AF50-N06-Z-A | SMC Corporation of America | AIR FILTER, 5 MICRON, 3/4 NPT, AF SERIES |
| 6 | ||
| VHS50-N06-MZ-D | SMC Corporation of America | VALVE, PRESSURE RELIEF 3 PORT, VHS SERIES |
| 2 | ||
| AF50-N06C-Z | SMC Corporation of America | FILTER, MODULAR, 3/4NPT, AIRLINE |
| 1 | ||
| AF50-N06D-8Z | SMC Corporation of America | FILTER, AIR, MODULAR F.R.L. |
| 1 | ||
| VHS50-N06-Z-D | SMC Corporation of America | PRESSURE RELIEF 3 PORT VALVE, VHS SERIES |
| 1 | ||
| AL50-N06-3Z-A | SMC Corporation of America | LUBRICATOR, AIR, 3/4NPT, DRAIN COCK, TRANSPARENT BOWL GUARD |
| 1 | ||
| AF50-N06D-Z-A | SMC Corporation of America | FILTER, AIR, 100 PSI, 3/4NPT, NO DRAIN |
| 1 | ||
| AF50-N06C-Z-A | SMC Corporation of America | FILTER, AF SERIES |
| 1 | ||
| AR50-N06BG-Z-D | SMC Corporation of America | REGULATOR, MODULAR, AR-D SERIES |
| 1 | ||
| AR50-N06-Z-B-X425 | SMC Corporation of America | REGULATOR, AR-B SERIES |
| 1 | ||
| 23EZS0450N0625 | Essentra Components | STANDOFF TWIST LOCK, .450 HOLD DIA, .615 SPACER |
| 0 | ||
| VHS50-N06B-S-RZ | SMC Corporation of America | PRESSURE RELIEF 3 PORT VALVE, VHS SERIES |
| 0 | ||
| VHS50-N06B-RZ-X1 | SMC Corporation of America | SINGLE ACTION RELIEF VALVE, VHS SERIES |
| 0 | ||
| VHS50-N06-B-Z-D-X1 | SMC Corporation of America | VALVE, PRESSURE RELIEF 3 PORT, VHS SERIES |
| 0 | ||
![]() Rochester Electronics | FQI50N06TU | onsemi | Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, I2PAK RoHS : Compliant |
| 28,073 | |
IPD50N06S4L-08![]() | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 30 | ||
IPD350N06LGBTMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS : Compliant |
| 7,464 | ||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 55V 50A (Tc) TO-252-3 T/R RoHS : Compliant |
| 12,070 | ||
| IPD50N06S214ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 55V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 46 | ||
| IPD50N06S4L08ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 2,268 | ||
| IPD50N06S4L12ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 251 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 60V 50A (Tc) TO-252-3 T/R RoHS : Compliant |
| 39,026 | ||
IPD50N06S409ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 60V 50A (Tc) TO-252-3 T/R RoHS : Compliant |
| 4,986 | ||
FQI50N06TU![]() | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, I2PAK RoHS : Compliant |
| 1,792 | ||
| RF1S50N06 | Harris Semiconductor | 50A, 60V, 0.022 OHM, N-Channel POWER MOSFET RoHS : Not Compliant |
| 2,746 | ||
| RF1S50N06LE | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Not Compliant |
| 4,042 | ||
| RF1S50N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Not Compliant |
| 1,705 | ||
| RF1S50N06SM9AS2551 | Harris Semiconductor | 50A, 60V, 0.022 Ohm, Esd Rated, Logic Level N-Channel Power Mosfet RoHS : Not Compliant |
| 653 | ||
| RFG50N06LE | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS : Not Compliant |
| 150 | ||
![]() TME | IPD350N06L G | Infineon Technologies AG | Transistor: N-MOSFET; 60V; 29A; 68W; DPAK3 |
| 5,000 | |
IPD50N06S4L-08![]() | Infineon Technologies AG | Transistor: N-MOSFET; 60V; 50A; DPAK; automotive industry RoHS : Compliant |
| 2,450 | ||
| 382LX102M450N062 | Knowles Precision Devices | Capacitor: electrolytic; 1mF; 450VDC |
| 2,021 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W RoHS : Compliant |
| 1,152 | ||
| DI050N06D1 | Diotec Semiconductor AG | Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W RoHS : Compliant |
| 858 | ||
| WMK50N06TS | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO220-3 RoHS : Compliant |
| 774 | ||
| RFP50N06 | onsemi | Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB RoHS : Compliant |
| 1 | ||
| DI050N06D1-AQ | Diotec Semiconductor AG | Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W |
| 0 | ||
| D2450N06TXPSA1 | Infineon Technologies AG | Diode: hockey-puck rectifying RoHS : Compliant |
| 0 | ||
| MCACD50N06YHE3-TP | Micro Commercial Components | Transistor: N-MOSFET x2; unipolar; 60V; 50A; PDFN5060D-8 RoHS : Compliant |
| 0 | ||
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET RoHS : Compliant |
| 0 | ||
| G050N06LL | Goford Semiconductor | Transistor: N-MOSFET; Trench; unipolar; 60V; 5A; 1.25W; SOT23-6 |
| 0 | ||
| DI050N06PQ2-AQ | Diotec Semiconductor AG | Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W RoHS : Compliant |
| 0 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A RoHS : Compliant |
| 0 | ||
| TSM850N06CX RFG | Taiwan Semiconductor | Transistor: N-MOSFET; unipolar; 60V; 2.3A; 300mW; SOT23 |
| 0 | ||
![]() Ameya Holding Limited | RSD050N06TL![]() | ROHM Semiconductor | RoHS : Compliant |
| 90 | |
![]() ComSIT USA | IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | AVAILABLE EU RoHS : Compliant | 2,155 | ||
![]() ComSIT USA | IPD50N06S4L08 | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 9,945 | ||
| SQD50N0609LGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 4,000 | |||
| SYD50N0609LE3 | Vishay Intertechnologies | Electronic Component RoHS : Compliant | 2,000 | |||
| SUD50N0607LE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S), 175 DEGREE CENTIGRADE MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 1,215 | |||
| MTB50N06VLT4 | Motorola Semiconductor Products | 60 VOLTS, 42 AMPS LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 1,180 | |||
| SUD50N0609L03 | Vishay Intertechnologies | N-CHANNEL 60 V (D-S), 175 DEGREE CELSIUS MOSFET, LOGIC LEVEL Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS : Compliant | 895 | |||
FQB50N06TM![]() | Fairchild Semiconductor Corporation | N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Not Compliant | 800 | |||
| SUM50N0616LE3 | Vishay Intertechnologies | N-CHANNEL 60-V (D-S) 175 DEGREE CELSIUS LOGIC LEVEL MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 340 | |||
![]() NexGen Digital | IPD50N06S4-09 | Nexperia | 2,130 | |||
| SUD50N06-09L-E3 | Vishay Huntington | 24 | ||||
| SQD50N06-09L_GE3 | Vishay Huntington | 6 | ||||
![]() Richardson RFPD | WMK50N06TS | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | ||
![]() Chip 1 Exchange | IPD50N06S2L-13 | INSTOCK | 2,500 | |||
| SMP50N0625 | INSTOCK | 930 | ||||
IPD50N06S4L-08![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
FQP50N06L![]() | Fairchild Semiconductor Corporation | INSTOCK RoHS : Compliant | 200 | |||
| MTP50N06V | INSTOCK | 151 | ||||
![]() Avnet Abacus | SUD50N06-09L-E3 | Vishay Intertechnologies | (Alt: SUD50N06-09L-E3) RoHS : Compliant | 0 | ||
![]() Avnet Asia | RSD050N06FRATL | ROHM Semiconductor | (Alt: RSD050N06FRATL) RoHS : Compliant | 0 | ||
| PCFQ50N06LW | onsemi | (Alt: PCFQ50N06LW) RoHS : Compliant | 0 | |||
| RFP50N06 | onsemi | N-Channel Power MOSFET 60V, 50A, 22mO (Alt: RFP50N06) RoHS : Compliant | 0 | |||
![]() Avnet Silica | FQP50N06 | onsemi | Power MOSFET NChannel QFET 60 V 50 A 22 m TO220 (Alt: FQP50N06) RoHS : Compliant | 0 | ||
| RFP50N06 | onsemi | NChannel Power MOSFET 60V 50A 22mO (Alt: RFP50N06) RoHS : Compliant | 0 | |||
| PCFQ50N06LW | onsemi | (Alt: PCFQ50N06LW) RoHS : Compliant | 0 | |||
![]() DB Roberts | 23EZS0450N0625 | Essentra Components | STANDOFF TWIST LOCK, .450 HOLD | 0 | ||
| 50M100150N060B | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 T | 0 | |||
| 50M100150N060 | Essentra Components | PAN SLOTTED SCREW, M10 X 1.5 T | 0 | |||
| 23EZS0450N0625B | Essentra Components | EZ STANDOFF 450 X 625 BLK M111 | 0 | |||
![]() EBV Elektronik | IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 60V 50A 3Pin TO252 TR (Alt: SP001028664) RoHS : Compliant | 50,000 | ||
IPD50N06S2L13ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 55V 50A 3Pin TO252 TR (Alt: SP001063626) RoHS : Compliant | 7,500 | |||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 60 V 50 A 0012 ohm TO252 DPAK Surface Mount (Alt: SP001028640) RoHS : Compliant | 2,500 | |||
| RFP50N06 | onsemi | NChannel Power MOSFET 60V 50A 22mO (Alt: RFP50N06) RoHS : Compliant | 300 | |||
| D2450N06TXPSA1 | Infineon Technologies AG | Rectifier Diode non Schottky 600V 2450A Type N 58mm Diam (Alt: SP000785948) RoHS : Compliant | 0 | |||
| NVBG050N065SC1 | onsemi | Silicon Carbide MOSFET (Alt: NVBG050N065SC1) RoHS : Compliant | 0 | |||
| TSM850N06CX RFG | Taiwan Semiconductor | (Alt: TSM850N06CX RFG) RoHS : Compliant | 0 | |||
| SQD50N06-09L-GE3 | Vishay Intertechnologies | (Alt: SQD50N06-09L-GE3) RoHS : Compliant | 0 | |||
| SQD50N06-09L_GE3 | Vishay Intertechnologies | (Alt: SQD50N06-09L_GE3) RoHS : Compliant | 0 | |||
IPD50N06S214ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 55 V 50 A 00108 ohm TO252 DPAK Surface Mount (Alt: SP001063624) RoHS : Compliant | 0 | |||
![]() Flip Electronics | FQB50N06LTM | onsemi | Stock, Ship Today RoHS : Compliant |
| 18,400 | |
| PCFQ50N06LW | onsemi | Stock, Ship Today | 12,318 | |||
![]() Maritex | IPD50N06S4-09![]() | Infineon Technologies AG | MOSFETs; IPD50N06S4-09; INFINEON TECHNOLOGIES; 50 A; 9 m?; 60 V; 71 W RoHS : Compliant |
| 2,427 | |
| IPD50N06S4L-12 | VBsemi Electronics Co Ltd | MOSFETs; IPD50N06S4L-12; VBSEMI; 60 V; 50 A; 16 V; 50 W |
| 2,380 | ||
| DI050N06D1-Q | Diotec Semiconductor AG | MOSFETs; DI050N06D1-Q; DIOTEC SEMICONDUCTOR RoHS : Compliant |
| 237 | ||
| UTT50N06 | VBsemi Electronics Co Ltd | Transistor: N-MOSFET; unipolar; 60V; 58A; 0,016ohm;136W; -55+175 st.C; SMD; TO-252 |
| 96 | ||
| DIT050N06 | Diotec Semiconductor AG | MOSFETs; DIT050N06; DIOTEC SEMICONDUCTOR; 50 A RoHS : Compliant |
| 57 | ||
![]() Master Electronics | RFP50N06 | onsemi | The RFP50N06 is a 60V 50A N-Channel power MOSFET featuring a low on-resistance of 0.022Ω in a TO-220AB package. RoHS : Not Compliant |
| 7,900 | |
| DIT050N06 | Diotec Semiconductor AG | MOSFET - TO-220AB - N - 60V - 50A - 14mΩ - 175°C RoHS : Compliant |
| 0 | ||
| DI050N06D1 | Diotec Semiconductor AG | MOSFET - DPAK - N - 60V - 50A - 8.5mΩ - 150°C RoHS : Compliant |
| 0 | ||
| 382LX102M450N062 | Knowles CDE | Aluminum Electrolytic Capacitor RoHS : Compliant |
| 0 |
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