| 판매업체 | 부품명 | 제조업체 | 상세설명 | Price | Qty. BuyNow |
 DigiKey | TAR05ATDP9530
| Viking Technology | RES SMD 953 OHM 1/5W 0805 | | 5,000
 |
TAR05BTDP9530
| Viking Technology | RES SMD 953 OHM 1/5W 0805 | | 5,000
 |
TAR05FTDP9532
| Viking Technology | RES SMD 95.3K OHM 1/5W 0805 | | 5,000
 |
TAR05CTDP9530
| Viking Technology | RES SMD 953 OHM 1/5W 0805 | | 5,000
 |
TAR05FTDP9530
| Viking Technology | RES SMD 953 OHM 1/5W 0805 | | 5,000
 |
TAR05DTDP9531
| Viking Technology | RES SMD 9.53K OHM 1/5W 0805 | | 5,000
 |
TAR05BTDP9531
| Viking Technology | RES SMD 9.53K OHM 1/5W 0805 | | 5,000
 |
TAR05CTDP95R3
| Viking Technology | RES SMD 95.3 OHM 1/5W 0805 | | 5,000
 |
TAR05ATDP95R3
| Viking Technology | RES SMD 95.3 OHM 1/5W 0805 | | 5,000
 |
TAR05ATDP9531
| Viking Technology | RES SMD 9.53K OHM 1/5W 0805 | | 5,000
 |
TAR05BTDP95R3
| Viking Technology | RES SMD 95.3 OHM 1/5W 0805 | | 5,000
 |
TAR05FTDP9531
| Viking Technology | RES SMD 9.53K OHM 1/5W 0805 | | 5,000
 |
TAR05DTDP9532
| Viking Technology | RES SMD 95.3K OHM 1/5W 0805 | | 5,000
 |
TAR05ATDP9532
| Viking Technology | RES SMD 95.3K OHM 1/5W 0805 | | 5,000
 |
TAR05CTDP9532
| Viking Technology | RES SMD 95.3K OHM 1/5W 0805 | | 5,000
 |
 Avnet Americas | BDP950H6327XTSA1
| Infineon Technologies AG | Trans GP BJT PNP 60V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP950H6327XTSA1) RoHS : Compliant | 48,000 : $0.23424 24,000 : $0.23546 12,000 : $0.23668 6,000 : $0.2379 3,000 : $0.23912
|
| 0
 |
BDP953H6327XTSA1
| Infineon Technologies AG | Trans GP BJT NPN 100V 3A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BDP953H6327XTSA1) RoHS : Compliant | 48,000 : $0.20441 24,000 : $0.20768 12,000 : $0.21094 6,000 : $0.21421 3,000 : $0.21747
|
| 0
 |
BDP954H6327XTSA1
| Infineon Technologies AG | - Tape and Reel (Alt: BDP954H6327XTSA1) RoHS : Compliant | 48,000 : $0.19877 24,000 : $0.20195 12,000 : $0.20512 6,000 : $0.2083 3,000 : $0.21147
|
| 0
 |
 RS | 83DP950D81 (US2:83DP950D81)
| Siemens | STARTER, DUPLEX, S1,THOLR,208VAC, N12 ; US2:83DP950D81 | | 0
 |
83DP95BH81 (US2:83DP95BH81)
| Siemens | STARTER, DUPLEX, S1,THOLR,480VAC, N1 ; US2:83DP95BH81 | | 0
 |
83DP950J81 (US2:83DP950J81)
| Siemens | STARTER, DUPLEX, S1,THOLR,24VAC, N12 ; US2:83DP950J81 | | 0
 |
83DP95EL81 (US2:83DP95EL81)
| Siemens | STARTER, DUPLEX, S1,THOLR,277VAC, N4 ; US2:83DP95EL81 | | 0
 |
83DP950H81 (US2:83DP950H81)
| Siemens | STARTER, DUPLEX, S1,THOLR,480VAC, N12 ; US2:83DP950H81 | | 0
 |
83DP95BG81 (US2:83DP95BG81)
| Siemens | STARTER, DUPLEX, S1,THOLR,240VAC, N1 ; US2:83DP95BG81 | | 0
 |
83DP95EF81 (US2:83DP95EF81)
| Siemens | STARTER, DUPLEX, S1,THOLR,120VAC, N4 ; US2:83DP95EF81 | | 0
 |
84DP95BDH81 (US2:84DP95BDH81)
| Siemens | STARTER, DUPLEX, S1,THOLR,480VAC, DISC, N1 ; US2:84DP95BDH81 | | 0
 |
84DP95EDH81 (US2:84DP95EDH81)
| Siemens | STARTER, DUPLEX, S1,THOLR,480VAC, DISC, N4 ; US2:84DP95EDH81 | | 0
 |
84DP95WDL81 (US2:84DP95WDL81)
| Siemens | STARTER, DUPLEX, S1,THOLR,277VAC, DISC, N4X ; US2:84DP95WDL81 | | 0
 |
84DP95BDD81 (US2:84DP95BDD81)
| Siemens | STARTER, DUPLEX, S1,THOLR,208VAC, DISC, N1 ; US2:84DP95BDD81 | | 0
 |
84DP95EDD81 (US2:84DP95EDD81)
| Siemens | STARTER, DUPLEX, S1,THOLR,208VAC, DISC, N4 ; US2:84DP95EDD81 | | 0
 |
84DP95WDJ81 (US2:84DP95WDJ81)
| Siemens | STARTER, DUPLEX, S1,THOLR,24VAC, DISC, N4X ; US2:84DP95WDJ81 | | 0
 |
84DP95EDL81 (US2:84DP95EDL81)
| Siemens | STARTER, DUPLEX, S1,THOLR,277VAC, DISC, N4 ; US2:84DP95EDL81 | | 0
 |
84DP950DL81 (US2:84DP950DL81)
| Siemens | STARTER, DUPLEX, S1,THOLR,277VAC, DISC, N12 ; US2:84DP950DL81 | | 0
 |
 Rochester Electronics | BDP953H6327XTSA1
| Infineon Technologies AG | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS : Compliant | 100,000 : $0.1717 10,000 : $0.2049 1,000 : $0.2298 500 : $0.2492 100 : $0.2769
|
| 40
 |
BDP954E6327
| Infineon Technologies AG | General Purpose Transistor RoHS : Compliant | 100,000 : $0.1471 10,000 : $0.1756 1,000 : $0.197 500 : $0.2136 100 : $0.2373
|
| 285
 |
BDP954H6327XTSA1
| Infineon Technologies AG | RF Power Bipolar Transistor, 1-Element, Silicon, PNP RoHS : Compliant | 100,000 : $0.1669 10,000 : $0.1992 1,000 : $0.2234 500 : $0.2423 100 : $0.2692
|
| 16,500
 |
 TME | BDP 953 H6327 TR
| Infineon Technologies AG | BDP 953 H6327 TR | | 2,000
 |
BDP953H6327XTSA1
| Infineon Technologies AG | Transistor: NPN; bipolar; 100V; 3A; 5W; SC73,SOT223 RoHS : Compliant | 2,000 : $0.254 1,000 : $0.265
|
| 0
 |
BDP954H6327XTSA1
| Infineon Technologies AG | Transistor: PNP; bipolar; 100V; 3A; 5W; SC73,SOT223 RoHS : Compliant | | 0
 |
 ComSIT USA | BDP950E6778
| Infineon Technologies AG | PNP SILICON AF POWER TRANSISTOR RF Power Bipolar Transistor, 1-Element, Silicon, PNP RoHS : Compliant | | 305,000
 |
BDP953E6327
| Infineon Technologies AG | SILICON NPN TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS : Not Compliant | | 2,000
 |
BDP950E6327
| Infineon Technologies AG | RF Power Bipolar Transistor, 1-Element, Silicon, PNP RoHS : Compliant | | 1,647
 |
BDP954H6327
| Infineon Technologies AG | TRANS PNP 100V 3A PG-SOT223-4-10 RoHS : Compliant | | 185
 |
 Chip 1 Exchange | SDP95
| Samsung Electro-Mechanics | INSTOCK | | 10
 |
 EBV Elektronik | BDP 953 H6327 TR
| Infineon Technologies AG | Trans GP BJT NPN 100V 3A 4Pin SOT223 TR (Alt: SP000748526) RoHS : Compliant | | 2,000
 |
BDP954H6327XTSA1
| Infineon Technologies AG | (Alt: SP000748528) RoHS : Compliant | | 1,000
 |
BDP950H6327XTSA1
| Infineon Technologies AG | Trans GP BJT PNP 60V 3A 4Pin SOT223 TR (Alt: SP000748522) RoHS : Compliant | | 0
 |
BDP 954 H6327 TR
| Infineon Technologies AG | Trans GP BJT PNP 100V 3A 4Pin SOT223 TR (Alt: SP000748528) RoHS : Compliant | | 0
 |
BDP 950 H6327 TR
| Infineon Technologies AG | Trans GP BJT PNP 60V 3A 4Pin SOT223 TR (Alt: SP000748522) RoHS : Compliant | | 0
 |
BDP953H6327XTSA1
| Infineon Technologies AG | Trans GP BJT NPN 100V 3A 4Pin SOT223 TR (Alt: SP000748526) RoHS : Compliant | | 0
 |
BDP953H6327XTSA1/SN
| Infineon Technologies AG | Trans GP BJT NPN 100V 3A 4Pin3Tab SOT223 TR (Alt: SP000748526) RoHS : Compliant | | 0
 |
 Master Electronics | SMA-Q0102FTDP953K
| TE Connectivity | MELF SMA-Q 953K 1% 50PPM 0102 0.2W RoHS : Compliant | 150,000 : $0.0679 102,000 : $0.076 51,000 : $0.0841 27,000 : $0.096 12,000 : $0.0987 9,000 : $0.1001 6,000 : $0.1015 3,000 : $0.1061
|
| 0
 |
SMA-Q0102FTDP953R
| TE Connectivity | MELF SMA-Q 953R 1% 50PPM 0102 0.2W RoHS : Compliant | 150,000 : $0.0679 102,000 : $0.076 51,000 : $0.0841 27,000 : $0.096 12,000 : $0.0987 9,000 : $0.1001 6,000 : $0.1015 3,000 : $0.1061
|
| 0
 |
SMA-Q0102FTDP95K3
| TE Connectivity | MELF SMA-Q 95K3 1% 50PPM 0102 0.2W RoHS : Compliant | 150,000 : $0.0679 102,000 : $0.076 51,000 : $0.0841 27,000 : $0.096 12,000 : $0.0987 9,000 : $0.1001 6,000 : $0.1015 3,000 : $0.1061
|
| 0
 |
SMA-Q0102FTDP95R3
| TE Connectivity | MELF SMA-Q 95R3 1% 50PPM 0102 0.2W RoHS : Compliant | 150,000 : $0.0679 102,000 : $0.076 51,000 : $0.0841 27,000 : $0.096 12,000 : $0.0987 9,000 : $0.1001 6,000 : $0.1015 3,000 : $0.1061
|
| 0
 |
 Vyrian | BDP953H6327XTSA1
| Infineon Technologies AG | Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | | 11,526
 |
BDP953E6327HTSA1
| Infineon Technologies AG | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS : Compliant | | 9,511
 |
BDP950H6327XTSA1
| Infineon Technologies AG | RF Power Bipolar Transistor, 1-Element, Silicon, PNP RoHS : Compliant | | 7,532
 |
BDP950E6327HTSA1
| Infineon Technologies AG | RF Power Bipolar Transistor, 1-Element, Silicon, PNP RoHS : Compliant | | 4,669
 |
BDP953H6327XTSA1/SN
| Infineon Technologies AG | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin RoHS : Compliant | | 893
 |
BDP953H6327
| Infineon Technologies AG | Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | | 579
 |