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DP9502AB 판매업체
판매업체부품명제조업체상세설명PriceQty.
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Rochester Electronics		BDP954H6327XTSA1

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
100,000 : $0.1669
10,000 : $0.1992
1,000 : $0.2234
500 : $0.2423
100 : $0.2692
11,700
BDP953H6327XTSA1

 Infineon Technologies AG Trans BJTs Single 100V 3A SOT223 T/R
RoHS : Compliant
100,000 : $0.1717
10,000 : $0.2049
1,000 : $0.2298
500 : $0.2492
100 : $0.2769
40
BDP954E6327

 Infineon Technologies AG Trans BJTs Single 100V 3A SOT223 T/R
RoHS : Compliant
100,000 : $0.1471
10,000 : $0.1756
1,000 : $0.197
500 : $0.2136
100 : $0.2373
285

TME		BDP 953 H6327 TR

 Infineon Technologies AG BDP 953 H6327 TR
2,000 : $0.247
2,000
BDP954H6327XTSA1

 Infineon Technologies AG Transistor: PNP; bipolar; 100V; 3A; 5W; SC73,SOT223
RoHS : Compliant
1,000 : $0.26
0
BDP953H6327XTSA1

 Infineon Technologies AG Transistor: NPN; bipolar; 100V; 3A; 5W; SC73,SOT223
RoHS : Compliant
2,000 : $0.245
1,000 : $0.256
0

Chip 1 Exchange		SDP95

 Samsung Electro-Mechanics INSTOCK
10

EBV Elektronik		BDP 953 H6327 TR

 Infineon Technologies AG Trans GP BJT NPN 100V 3A 4Pin SOT223 TR (Alt: SP000748526)
RoHS : Compliant
2,000
BDP954H6327XTSA1

 Infineon Technologies AG (Alt: SP000748528)
RoHS : Compliant
1,000
BDP950H6327XTSA1

 Infineon Technologies AG Trans GP BJT PNP 60V 3A 4Pin SOT223 TR (Alt: SP000748522)
RoHS : Compliant
0
BDP 950 H6327 TR

 Infineon Technologies AG Trans GP BJT PNP 60V 3A 4Pin SOT223 TR (Alt: SP000748522)
RoHS : Compliant
0
BDP953H6327XTSA1

 Infineon Technologies AG Trans GP BJT NPN 100V 3A 4Pin SOT223 TR (Alt: SP000748526)
RoHS : Compliant
0
BDP 954 H6327 TR

 Infineon Technologies AG Trans GP BJT PNP 100V 3A 4Pin SOT223 TR (Alt: SP000748528)
RoHS : Compliant
0
BDP953H6327XTSA1/SN

 Infineon Technologies AG Trans GP BJT NPN 100V 3A 4Pin3Tab SOT223 TR (Alt: SP000748526)
RoHS : Compliant
0

Vyrian		BDP953H6327XTSA1

 Infineon Technologies AG Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
RoHS : Compliant
11,526
BDP953E6327HTSA1

 Infineon Technologies AG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
RoHS : Compliant
9,511
BDP950H6327XTSA1

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
7,532
BDP950E6327HTSA1

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
4,669
BDP953H6327XTSA1/SN

 Infineon Technologies AG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
RoHS : Compliant
893
BDP953H6327

 Infineon Technologies AG Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
RoHS : Compliant
579

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