| 전자부품 데이터시트 검색엔진 |
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MA12VG-CB2-R 판매업체 |
| 판매업체 | 부품명 | 제조업체 | 상세설명 | Price | Qty. BuyNow | |
![]() PUI | MA1500 | 3 | ||||
![]() ECCO | DEMA-15P | ITT Interconnect Solutions | RoHS : Not Compliant |
| 193 | |
![]() Relay Specialties | MA1-B-32-610-1-A17-A-E | Carling Technologies | Carling Circuit Breaker RoHS : Compliant |
| 160 | |
| PRMA1C05 | Coto Technology USA | Reed Relays; Coil Voltage: 5 V RoHS : Compliant |
| 20 | ||
| GMA-15A | Eaton Bussmann | Glass Body Fuses, 125 V/150A Holder, Fast Blow, 15 A 5mm x 20mm |
| 16 | ||
| MA1-B-34-625-1-A26-2-C | Carling Technologies | Carling Hydraulic-Magnetic Circuit Breakers RoHS : Compliant |
| 12 | ||
| RU42S-M-A110 | IDEC Corporation | Power Relay; 4C 4PDT; 3 A 110-120VAC; Non Latching Socketable; Plug In |
| 10 | ||
![]() Vyrian | IPD053N08N3GBTMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS : Compliant | 11,729 | ||
| IPD50R800CEATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 11,581 | |||
| F3L75R12W1H3B27BOMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 10,778 | |||
IFX25401TEVATMA1![]() | Infineon Technologies AG | Adjustable Positive LDO Regulator, 2.5V Min, 20V Max, 0.5V Dropout, PSSO4 RoHS : Compliant | 10,588 | |||
IPB034N03LGATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 10,133 | |||
IPB60R950C6ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 9,602 | |||
ICLS6022GXUMA1![]() | Infineon Technologies AG | LED Driver, 6-Segment, BICMOS, PDSO16 RoHS : Compliant | 7,226 | |||
IPB60R380P6ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 6,683 | |||
| IFX1117MEV33HTMA1 | Infineon Technologies AG | Fixed Positive Standard Regulator, 3.3V, PDSO4 RoHS : Compliant | 5,147 | |||
IPB090N06N3GATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 4,195 | |||
| MA12070XUMA1 | Infineon Technologies AG | 160W, 1 Channel(s), 1 Func RoHS : Compliant | 3,894 | |||
| 5AGXMA1G6F31C5N | Intel Corporation | Field Programmable Gate Array, 622MHz, PBGA896 RoHS : Compliant | 3,851 | |||
| 5AGXMA1H6F27I5 | Intel Corporation | Field Programmable Gate Array, 622MHz, PBGA672 RoHS : Not Compliant | 3,695 | |||
| EDB2432B4MA-1DAAT-F-R | Micron Technology Inc | LPDDR2 DRAM, 64MX32, CMOS, PBGA134 RoHS : Compliant | 3,349 | |||
| 5AGXMA1K6F31I3N | Intel Corporation | Field Programmable Gate Array, 670MHz, PBGA896 RoHS : Compliant | 2,204 | |||
![]() Waytek, Inc. | BPDMA104HXF1 | Littelfuse Inc | The Littelfuse fuse holder for MINI and JCASE fuses is a sealed 2-circuit fuse block designed for compact power distribution and circuit protection. Featuring a single internally bussed M6 input stud, it distributes power to two fused outputs for simplified wiring. Rated up to 60A and 32VDC, it supports MINI and JCASE fuse types and is built with a sealed housing to protect against moisture, dirt, and vibration in harsh environments. RoHS : Compliant |
| 275 | |
![]() Win Source Electronics | IAUC120N04S6N013ATMA1 | Infineon Technologies AG | IAUC120N04S6N013ATMA1 RoHS : Compliant |
| 140,140 | |
| BSC011N03LSATMA1 | Infineon Technologies AG | MOSFET N-CH 30V 37A/100A TDSON RoHS : Compliant |
| 56,050 | ||
| BSC340N08NS3GATMA1 | Infineon Technologies AG | MOSFET N-CH 80V 23A TDSON-8 RoHS : Compliant |
| 49,900 | ||
| BTS41K0SMENHUMA1 | Infineon Technologies AG | IC PWR SWTCH N-CHAN 1:1 SOT223-4 / Power Switch/Driver 1:1 N-Channel PG-SOT223-4 RoHS : Compliant |
| 41,660 | ||
| IPN80R750P7ATMA1 | Infineon Technologies AG | MOSFET N-CH 800V 7A SOT223 RoHS : Compliant |
| 27,770 | ||
| IPD60R380P6ATMA1 | Infineon Technologies AG | MOSFET N-CH 600V 10.6A TO252-3 RoHS : Compliant |
| 23,750 | ||
| BTS70081EPPXUMA1 | Infineon Technologies AG | IC PWR SWTCH N-CHAN 1:1 TSDSO-14 / Power Switch/Driver 1:1 N-Channel 11A PG-TSDSO-14-22 RoHS : Compliant |
| 23,000 | ||
| IPG20N06S2L65ATMA1 | Infineon Technologies AG | MOSFET 2N-CH 55V 20A TDSON-8-4 RoHS : Compliant |
| 15,000 | ||
| BSC035N04LSGATMA1 | Infineon Technologies AG | MOSFET N-CH 40V 100A TDSON-8 RoHS : Compliant |
| 14,000 | ||
IPB039N10N3GATMA1![]() | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS : Compliant |
| 9,450 | ||
| BSC030P03NS3GAUMA1 | Infineon Technologies AG | MOSFET P-CH 30V 25.4/100A 8TDSON RoHS : Compliant |
| 4,805 | ||
| MA12070PXUMA1 | Infineon Technologies AG | IC AMP CLASS D STEREO 30W 64QFN RoHS : Compliant |
| 4,000 | ||
| IPT60R035CFD7XTMA1 | Infineon Technologies AG | MOSFET N-CH 600V 67A 8HSOF / N-Channel 600 V 67A (Tc) 351W (Tc) Surface Mount PG-HSOF-8-1 RoHS : Compliant |
| 3,650 | ||
| BTS51802EKAXUMA1 | Infineon Technologies AG | IC PWR SW HI-SIDE 2CH DSO14-40 RoHS : Compliant |
| 2,310 | ||
| BTS500801TEAAUMA1 | Infineon Technologies AG | IC PWR SWITCH N-CHAN 1:1 TO252-5 / Power Switch/Driver 1:1 N-Channel 10A PG-TO252-5-11 RoHS : Compliant |
| 214 | ||
![]() Wuhan P&S | IHLP2525CZERR15MA1 | Vishay Intertechnologies | IHLP-2525CZ-A1 .15 20% ER E3 RoHS : Compliant |
| 150,000 | |
M1MA142WKT1G![]() | onsemi | Common Cathode Silicon Dual Switching Diode RoHS : Compliant |
| 63,000 | ||
| IHLP2525CZEK2R2MA1 | Vishay Intertechnologies | IHLP-2525CZ-A1 2.2 20% EK E3 RoHS : Compliant |
| 25,000 | ||
| P4SMA12A-E3/61 | Vishay Intertechnologies | Surface Mount TRANSZORB Transient Voltage Suppressors RoHS : Compliant |
| 23,400 |
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