| 전자부품 데이터시트 검색엔진 |
|
S2L-A2-R 판매업체 |
| 판매업체 | 부품명 | 제조업체 | 상세설명 | Price | Qty. BuyNow | |
![]() Rochester Electronics | IPB100N04S2L03ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 51,193 | |
| IPB100N06S2L05ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 55V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 9 | ||
IPB100N06S2L05ATMA2![]() | Infineon Technologies AG | IPB100N06 - 55V-60V N-Channel Automotive MOSFET RoHS : Compliant | 22,108 | |||
| IPB100N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 58,946 | ||
IPB160N04S2L03ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 40V 160A (Tc) TO-263-7 T/R RoHS : Compliant |
| 160 | ||
| IPB80N04S2L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 3,000 | ||
IPB80N06S2L07ATMA3![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 784 | ||
IPB80N06S2L09ATMA2![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 104,136 | ||
IPB80N06S2L11ATMA2![]() | Infineon Technologies AG | MOSFET N-Channel 55V 80A (Tc) TO-263-3 T/R RoHS : Compliant |
| 2,530 | ||
| IPB80N06S2LH5ATMA3 | Infineon Technologies AG | OptlMOS N-Channel Power MOSFET RoHS : Compliant |
| 16,000 | ||
IPB80N06S2LH5ATMA4![]() | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 11,156 | ||
| IPB80N08S2L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant |
| 21,040 | ||
| IPD15N06S2L64ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 300 | ||
| IPD22N08S2L50ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 27A I(D), 75V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant |
| 1,720 | ||
| IPD26N06S2L35ATMA2 | Infineon Technologies AG | MOSFET N-Channel 500V 3.7A (Tc) TO-220-3 Tube RoHS : Compliant |
| 27,995 | ||
![]() NexGen Digital | STPS2L60AY | STMicroelectronics | RoHS : Compliant | 10,000 |
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