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MMBT7002K 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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MMBT7002K 데이터시트(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() MMBT7002K MMBT7002K N-Channel Enhancement Mode FET N-Kanal FET – Anreicherungstyp ID = 300 mA RDS(on)1 < 3 Ω Tjmax = 150°C VDSS = 60 V Ptot = 350 mW VGSS1 = ± 2 kV Version 2017-05-30 SOT-23 (TO-236) 1 = G 2 = S 3 = D Dimensions - Maße [mm] Typical Applications Signal processing, Logic level converter, Drivers Commercial grade 1) Typische Anwendungen Signalverarbeitung, Pegel- wandler, Treiberstufen Standardausführung 1) Features ESD protected Gate Fast switching times Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten ESD geschütztes Gate Schnelle Schaltzeiten Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Gate protection diode Type Code K72 Maximum ratings 2) Grenzwerte 2) Drain-Source-voltage Drain-Source-Spannung VDSS 60 V Gate-Source-voltage Gate-Source-Spannung dc ESD VGSS ± 20 V ± 2 kV Power dissipation Verlustleistung Ptot 350 mW Drain current Drainstrom dc ID 300 mA Peak Drain current Drain-Spitzenstrom IDM 800 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 1.1 +0.1 0.4+0.1 2.9 ±0.1 1 2 3 Type Code 1.9±0.1 -0.05 -0.2 G D S |
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