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TLP921 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 TLP921
상세설명  Toshiba Photoreflective sensor Infrared LED Phototransistor Inkjet printers ink-level monitoring
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP921 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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TLP921
2002-04-03
2
Electrical and Optical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20 mA
¾
1.25
1.4
V
Reverse current
IR
VR = 5 V
¾
¾
10
mA
Peak emission wavelength
lP
IF = 20 mA
¾
940
¾
nm
Dark current
ID (ICEO)
VCE = 24 V, IF = 0
¾
¾
0.1
mA
Peak sensitivity wavelength
lP
¾
¾
870
¾
nm
Collector current
IC
VCE = 5 V, IF = 20 mA
(Note 2)
580
¾
2600
mA
Leakage current
ILEAK
VCE = 5 V, IF = 20 mA
(Note 3)
¾
¾
120
mA
Collector-Emitter saturation
voltage
VCE (sat)
IF = 20 mA, IC = 0.3 mA
¾
0.1
0.4
V
Rise time
tr
VCE = 2 V, IC = 0.5 mA
¾
38
90
Fall time
tf
RL = 1 kW, d = 8 mm
(Note 4)
¾
48
110
ms
Note 2: The following drawings show condition and the layout of reflectors.
Note 3: Measurement layout drawing for leakage current
Note 4: Measurement circuit and waveforms for Switching time
Evaporated surface
of aluminum
Evaporated
aluminum glass
8 mm
Sensor
1 mm
VOUT
IF
tr
90%
10%
tf
Prism
VCC
VOUT
RL
IF
8 mm
7 mm
7 mm
Right angle prism (material: BK7)
Thickness:7 mm
Sensor



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