DMN2004DWK

Document number: DS30935 Rev. 7 - 2

2 of 7

www.diodes.com

February 2017

© Diodes Incorporated

DMN2004DWK

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Drain Current (Note 5)

Steady

State

540

390

mA

Pulsed Drain Current (Note 6)

1.5

A

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

200

mW

Thermal Resistance, Junction to Ambient

625

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

20

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

1

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

1.0

V

Static Drain-Source On-Resistance

—

0.4

0.5

0.7

0.55

0.70

0.9

Ω

Forward Transfer Admittance

200

—

—

mS

Diode Forward Voltage (Note 7)

0.5

—

1.4

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

36

150

pF

f = 1.0MHz

Output Capacitance

—

5.7

25

pF

Reverse Transfer Capacitance

—

4.2

20

pF

—

0.53

—

nC

—

0.95

—

Gate-Source Charge

—

0.08

—

Gate-Drain Charge

—

0.07

—

Turn-On Delay Time

—

4.1

—

ns

Turn-On Rise Time

—

7.3

—

ns

Turn-Off Delay Time

—

13.8

—

ns

Turn-Off Fall Time

—

10.5

—

ns

Notes:

5. Device mounted on FR-4 PCB.

6. Pulse width

10µs, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.