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SPW20N60CFD 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 SPW20N60CFD
상세설명  isc N-Channel MOSFET Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
SPW20N60CFD
ISPW20N60CFD
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤220mΩ
·
Enhancement mode:
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
High peak current capability
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
20.7
A
IDM
Drain Current-Single Pulsed
52
A
PD
Total Dissipation @TC=25℃
208
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
0.6
℃
/W
Rth(j-a)
Channel-to-ambient thermal resistance
62
℃
/W


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