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TPC816 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TPC816 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 10 page ![]() TPC816 SERIES Taiwan Semiconductor 2 Version:B1612 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL PART NUMBER UNIT Input Forward current IF 50 mA Peak forward current (Note 1) IFM 1 A Reverse voltage VR 6 V Power dissipation P 70 mW Output Collector-emitter voltage VCEO 70 V Emitter-collector voltage VECO 6 V Collector current IC 50 mA Collector power dissipation PC 150 mW Total power dissipation Ptot 200 mW Isolation voltage (Note 2) Viso 5000 Vrms Operating temperature Topr -30 to +100 °C Storage temperature Tstg -55 to +125 °C Soldering temperature (Note 3) Tsol 260 °C Notes: 1. Pulse width≦100ms,Duty ratio:0.001 2. 40 to 60% RH,AC for 1 minute 3. For 10s ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Input Forward voltage IF=20mA VF 1.2 1.4 V Peak forward voltage IFM=0.5A VFM 3.0 V Reverse current VR=4V IR 10 μA Terminal capacitance V=0, f=1kHz Ct 30 250 pF Output Collector dark current VCE=20V,IF=0 ICEO 10 -7 A Transfer Characteristics Current transfer ration (Note 1) IF=5mA, VCE=5V CTR 80 600 % Collector-emitter saturation voltage IF=20mA, IC=1mA VCE(sat) 0.1 0.2 V Isolation resistance DC500V, 40 to 60%RH RISO 5x10 10 10 11 Ω Floating capacitance V=0, f=1MHz Cf 0.6 1.0 pF Cut-off frequency VCE=5V, IC=2mA, RL=100Ω, -3dB fc 80 KHz Response time Rise time VCE=2V, IC=2mA, RL=100Ω tr 4 18 μs Fall time tf 3 18 μs Notes: 1. Classification table of current transfer ratio is shown below |
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