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TPW60R080CFD 데이터시트(PDF) 1 Page - Wuxi Unigroup Microelectronics Company |
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TPW60R080CFD 데이터시트(HTML) 1 Page - Wuxi Unigroup Microelectronics Company |
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1 / 8 page ![]() TPV60R080CFD, TPW60R080CFD V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company FEATURES Very low FOM R DS(on)×Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPV60R080CFD TO-3PN 60R080CFD TPW60R080CFD TO-247 60R080CFD Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = 0V) V DSS 600 V Continuous Drain Current I D 47 A Pulsed Drain Current (note1) I DM 141 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 1120 mJ Avalanche Current (note1) I AR 15 A Repetitive Avalanche Energy (note1) E AR 1.76 mJ Power Dissipation (T C = 25ºC) P D 390 W Operating Junction and Storage Temperature Range T J, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thJC 0.32 K/W Thermal Resistance, Junction-to-Ambient R thJA 62 600V Super-Junction Power MOSFET 1 |
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