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DMN3035LWN 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 DMN3035LWN
상세설명  30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3035LWN 데이터시트(HTML) 4 Page - Diodes Incorporated

  DMN3035LWN Datasheet HTML 1Page - Diodes Incorporated DMN3035LWN Datasheet HTML 2Page - Diodes Incorporated DMN3035LWN Datasheet HTML 3Page - Diodes Incorporated DMN3035LWN Datasheet HTML 4Page - Diodes Incorporated DMN3035LWN Datasheet HTML 5Page - Diodes Incorporated DMN3035LWN Datasheet HTML 6Page - Diodes Incorporated DMN3035LWN Datasheet HTML 7Page - Diodes Incorporated  
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DMN3035LWN
Document number: DS37528 Rev. 3 - 2
4 of 7
www.diodes.com
October 2016
© Diodes Incorporated
DMN3035LWN
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=4.5V, ID=4.3A
V
GS=10V, ID=4.8A
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A=-55℃
T
A=+25℃
T
A=+85℃
T
A=+125℃
T
A=+150℃
V
GS=0V
1
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
iss
C
oss
Crss
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
V
DS=15V, ID=5.8A
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=+150℃
T
A=+25℃
Single Pulse
DUT on
1*MRP Board
V
GS=10V
R
DS(ON) Limited
DC
P
W=10s
P
W=1s
P
W=100ms
P
W=10ms
P
W=
1ms
P
W=100µs
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs
JunctionTemperature
I
D=250mA
I
D=1mA



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