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DMN3110LCP3 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 DMN3110LCP3
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3110LCP3 데이터시트(HTML) 3 Page - Diodes Incorporated

  DMN3110LCP3 Datasheet HTML 1Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 2Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 3Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 4Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 5Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 6Page - Diodes Incorporated DMN3110LCP3 Datasheet HTML 7Page - Diodes Incorporated  
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DMN3110LCP3
Document number: DS38546 Rev. 3 - 2
3 of 7
www.diodes.com
January 2017
© Diodes Incorporated
DMN3110LCP3
0.0
2.0
4.0
6.0
8.0
10.0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 1.2V
V
GS = 1.5V
V
GS = 1.8V
V
GS = 8.0V
V
GS = 4.5V
V
GS=3.0V
V
GS = 2.0V
V
GS = 2.5V
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 10V
V
GS = 4.5V
V
GS = 2.5V
V
GS = 8.0V
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Junction Temperature
VGS=8V
-55
℃
25
℃
85
℃
150
℃
125
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Junction
Temperature
V
GS = 8.0V, ID = 0.5A
V
GS = 4.5V, ID = 0.5A
0.03
0.04
0.05
0.06
0.07
0.08
0.09
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 8.0V, ID = 0.5A
V
GS = 4.5V, ID = 0.5A
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
-55
℃
25
℃
85
℃
125
℃
150
℃



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