MMBT5551 datasheet(2/2 Pages) DIOTEC

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MMBT5401

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.1)

- IC = 10 mA - IB = 1 mA

- IC = 50 mA - IB = 5 mA

- VCEsat

–

0.2 V

0.5 V

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)

- IC = 10 mA - IB = 1 mA

- IC = 50 mA - IB = 5 mA

- VBEsat

–

1.0 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 120 V E open

E open, Tj = 100°C

- ICBO

–

50 nA

50 µA

Emitter-Base-cutoff current – Emitter-Basis-Reststrom

- VEB = 4 V

C open

- IEBO

–

50 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 10 V, f = 100 MHz

100 MHz

–

300 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–

6 pF

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – umgebung

RthA

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

[%]

tot

120

100

[°C]

150

100

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

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