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QID4520002 데이터시트(PDF) 5 Page - Powerex Power Semiconductors |
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QID4520002 데이터시트(HTML) 5 Page - Powerex Power Semiconductors |
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5 / 6 page ![]() QID4520002 Dual IGBT HVIGBT Module 200 Amperes/4500 Volts 5 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Preliminary 11/14 Rev. 3 Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) 100 102 166.0 16.6 1.66 0.165 101 VGE = 0V Tj = 25°C f = 100 kHz Cies Coes Cres 0 165.0 82.5 247.5 330.0 412.5 10-1 GATE CHARGE, Q G, (C) GATE CHARGE VS. VGE 20 0 5 10 15 0 -5 -10 -15 0.825 3.30 2.48 1.65 VCE = 2800V IC = 200A Tj = 25°C COLLECTOR CURRENT, I C, (AMPERES) 2.66 0.33 0.66 1.00 1.33 1.66 2.00 2.33 0 VCC = 2800V VGE = ±15V RG(on) = 16.2 RG(off) = 60 Ls = 150nH Tj = 125°C Inductive Load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) Eon Eoff Erec COLLECTOR EMITTER VOLTAGE, V CES, (VOLTS) 500 416 333 250 166 83 0 2000 1000 3000 0 REVERSE BIAS SAFE OPERATING AREA (RBSOA) VCC ≤ 3200V VGE = ±15V RG(off) = 60 Tj = 125°C 5000 4000 |
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