| 전자부품 데이터시트 검색엔진 |
|
DMNH6042SSD 데이터시트(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMNH6042SSD 데이터시트(HTML) 4 Page - Diodes Incorporated |
|
4 / 7 page ![]() DMNH6042SSD Document number: DS37631 Rev. 1 - 2 4 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SSD 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature V GS = 4.5V, ID = 4.4A V GS = 10V, ID = 5.1A 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature I D = 1mA I D = 250µA 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current V GS = 0V T A = -55 oC T A = 25 oC T A = 85 oC T A = 125 oC T A = 150 oC T A = 175 oC 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 60 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f = 1MHz C iss C oss C rss 0 2 4 6 8 10 0 2 4 6 8 10 Q g (nC) Figure 11. Gate Charge V DS = 44V, ID = 5.2A 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area T J(Max) = 175℃ T C = 25℃ Single Pulse DUT on 1*MRP Board V GS = 10V R DS(ON) Limited DC P W = 10s P W = 1s P W = 100ms P W = 10ms P W = 1ms P W = 100µs |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |