STWBC-EPTR datasheet(19/32 Pages) STMICROELECTRONICS

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STWBC-EP

Electrical characteristics

6.9.2

Memory characteristics

Flash program and memory/data EEPROM memory

General conditions: TA = -40 °C to 105 °C.

Table 8. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min.(1) Typ.(1) Max. (1)

Unit

tPROG

Standard programming time

6.6

(including erase) for byte/word/block

(1 byte/4 bytes/128 bytes)

Fast programming time for 1 block (128 bytes)

3.3

tERASE Erase time for 1 block (128 bytes)

3.3

NWE

Erase/write cycles(2) (program memory)

TA = 25 °C

10 K

Cycle

Erase/write cycles(2) (data memory)

TA = 85 °C

100 K

TA = 105 °C

35 K

tRET

Data retention (program memory) after 10 K

erase/write cycles at TA= 25 °C

TRET = 85 °C

Years

Data retention (program memory) after 10 K

erase/write cycles at TA= 25 °C

TRET = 105 °C

Data retention (data memory) after 100 K

erase/write cycles at TA= 85 °C

TRET = 85 °C

Data retention (data memory) after 35 K

erase/write cycles at TA= 105 °C

TRET = 105 °C

IDDPRG

Supply current during program and erase

cycles

-40 ºC

 TA  105 ºC

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

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