DMP2003UPS-13 datasheet(2/7 Pages) DIODES

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DMP2003UPS

Document number: DS39597 Rev. 2 - 2

2 of 7

www.diodes.com

October 2017

DMP2003UPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-20

Gate-Source Voltage

VGSS

±12

Continuous Drain Current, VGS = -10V (Note 7)

TC = +25°C

TC = +70°C

-150

-120

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-350

Maximum Continuous Body Diode Forward Current (Note 7)

-120

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

-350

Avalanche Current, L = 0.1mH (Note 8)

IAS

-32

Avalanche Energy, L = 0.1mH (Note 8)

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

°C/W

Total Power Dissipation (Note 6)

2.7

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Case (Note 7)

RJC

1.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

-20

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-1

µA

VDS = -16V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 12V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

-0.5

—

-1.4

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

1.7

2.2

Ω

VGS = -10V, ID = -25A

—

1.9

2.55

VGS = -4.5V, ID = -20A

—

2.5

4.0

VGS = -2.5V, ID = -15A

Diode Forward Voltage

VSD

—

-0.6

-1.1

VGS = 0V, IS = -5A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

8352

—

VDS = -10V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

1406

—

Reverse Transfer Capacitance

Crss

—

599

—

Gate Resistance

—

13.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

—

VDS = -10V, ID = -20A

Total Gate Charge (VGS = -10V)

—

177

—

Gate-Source Charge

Qgs

—

14.3

—

Gate-Drain Charge

Qgd

—

19.8

—

Turn-On Delay Time

tD(ON)

—

7.8

—

VDD = -10V, VGEN = -4.5V,

RGEN = 1Ω, ID = -10A

Turn-On Rise Time

—

4.9

—

Turn-Off Delay Time

tD(OFF)

—

377

—

Turn-Off Fall Time

—

189

—

Reverse Recovery Time

tRR

—

IF = -10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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