SLG59H1007V datasheet(3/20 Pages) DIALOG

3 / 20 page

000-0059H1007-100

Page 3 of 20

SLG59H1007V

Absolute Maximum Ratings

Parameter

Description

Conditions

Min.

Typ.

Max.

Unit

VIN to GND

Power Switch Input Voltage to GND

Continuous

-0.3

Maximum pulsed VIN, pulse

width <0.1s

VOUT to GND

Power Switch Output Voltage to

GND

-0.3

VIN

ON, SEL[1,0], CAP,

RSET, POUT, and

FAULT to GND

ON, SEL[1,0], CAP, RSET, POUT,

and FAULT Pin Voltages to GND

-0.3

Storage Temperature

-65

150

°C

ESDHBM

ESD Protection

Human Body Model

2000

ESDCDM

ESD Protection

Charged Device Model

500

MSL

Moisture Sensitivity Level

θJA

Thermal Resistance

1.6 x 3.0 mm 18L STQFN; De-

termined with the device mount-

ed onto a 1 in2, 1 oz. copper pad

of FR-4 material

°C/W

MOSFET IDSCONT

Continuous Current from VIN to

VOUT

TJ < 150°C

MOSFET IDSPEAK Peak Current from VIN to VOUT

Maximum pulsed switch current,

pulse width < 1 ms, 1% duty cy-

cle

Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Electrical Characteristics

4.5 V ≤ VIN ≤ 22 V; CIN = 47 μF, TA = -40°C to 85°C, unless otherwise noted. Typical values are at TA = 25°C

Parameter Description

Conditions

Min.

Typ.

Max.

Unit

VIN

Operating Input Voltage

4.5

VIN(OVLO)

VIN Overvoltage Lockout Threshold

VIN ↑; SEL[1,0] = [0,0]

5.6

6.3

VIN ↑; SEL[1,0] = [0,1]

10.2

10.8

11.4

VIN ↑; SEL[1,0] = [1,0]

13.5

14.4

15.2

VIN ↑; SEL[1,0] = [1,1]

22.6

25.2

VIN(UVLO)

VIN Undervoltage Lockout

Threshold

VIN ↓

2.4

3.8

Quiescent Supply Current

ON = HIGH;

IDS = 0 A

0.5

0.6

ISHDN

OFF Mode Supply Current

ON = LOW;

IDS = 0 A

µA

RDSON

Static Drain to Source ON Resistance

TA = 25°C;

IDS = 0.1 A

13.3

mΩ

TA = 85°C;

IDS = 0.1 A

17.7

mΩ

ILIMIT

Active Current Limit, IACL

VOUT > 0.5 V; RSET = 30.1 kΩ

2.8

3.2

3.6

Short-circuit Current Limit, ISCL

VOUT < 0.5 V

0.5

TACL

Active Current Limit Response Time

RSET = 51.6 kΩ

120

µs

SLG59H1007V 데이터시트(PDF) 3 Page - Dialog Semiconductor

SLG59H1007V 데이터시트(HTML) 3 Page - Dialog Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

데이터시트 다운로드

링크 URL