ACE5290B datasheet(1/10 Pages) ACE

부품명	ACE5290B

상세설명	20V Complementary Enhancement Mode Field Effect Transistor

PDF	10 Pages

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제조업체	ACE [ACE Technology Co., LTD.]

홈페이지	http://www.ace-ele.com

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ACE5290B

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE5290B combines advanced trench MOSFET technology with a low resistance package to

provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.

Features

N-channel



VDS (V) = 20V



ID=3.5A



RDS(ON)

< 50m

Ω (VGS=4.5V)

< 80mΩ (VGS=2.5V)

P-channel



VDS (V) = -20V



ID = -2.5A



RDS(ON)

< 85mΩ (VGS = -4.5V)

< 115mΩ (VGS = -2.5V)

Absolute Maximum Ratings

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Voltage

VDSS

20

-20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)*AC

TA=25℃

ID

3.5

-2.5

A

TA=70℃

3

-2

Drain Current (Pulsed)*B

IDM

13

-13

A

Power Dissipation

TA=25℃

PD

1.1

W

TA=70℃

0.7

Operating temperature / storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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ACE5290B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

ACE5290B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD.

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