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ACE6602B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD.

부품명 ACE6602B
상세설명  N-Channel Super Trench Power MOSFET
PDF  6 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE6602B
N-Channel Super Trench Power MOSFET
VER 1.1
1
Description
ACE6602B uses Super Trench technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and switching power losses are minimized due to an
extremely low combination of RDS(on) and Qg.This device is ideal for high-frequency switching and
synchronous rectification.
Features
VDS= 60V , ID=80A
RDS(ON)@ VGS = 10V , TYP= 3.5m
Ω
RDS(ON)@ VGS = 4.5V , TYP= 4
mΩ
Absolute Maximum Ratings@TA=25℃ unless otherwise noted
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous)*AC
TA=25℃
ID
80
A
TA=100℃
58
Drain Current (Pulsed)*B
IDM
320
A
Power Dissipation
TA=25℃
PD
85
W
Operating temperature / Storage temperature
TJ/TSTG
-55~150
℃
A: The value of RθJAis measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
DFN5*6-EP


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