| 전자부품 데이터시트 검색엔진 |
|
AP3P028LM 데이터시트(PDF) 4 Page - Advanced Power Electronics Corp. |
|
|
|||||||||||||||||||||||||||||
AP3P028LM 데이터시트(HTML) 4 Page - Advanced Power Electronics Corp. |
|
4 / 6 page ![]() AP3P028LM Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 2.01E+09 Fig 11. Transfer Characteristics Fig 12. Drain Current v.s. Ambient Temperature 4 0 2 4 6 8 0 1020 3040 Q G , Total Gate Charge (nC) I D =-7 A V DS = -15V 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 33 37 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125 oC/W 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC Operation in this area limited by RDS(ON) 0 2 4 6 8 10 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) 0 10 20 30 01 234 -V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS = -5V T j = -55 o C . |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |