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KF5N53FS 데이터시트(PDF) 1 Page - KEC(Korea Electronics) |
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KF5N53FS 데이터시트(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 6 page ![]() 2012. 3. 29 1/6 SEMICONDUCTOR TECHNICAL DATA KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・VDSS= 525V, ID= 5.0A ・Drain-Source ON Resistance : RDS(ON)=1.5Ω @VGS = 10V ・Qg(typ) = 12nC ・trr(typ) = 150ns MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 525 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 5.0* A @TC=100℃ 2.9* Pulsed (Note1) IDP 13* Single Pulsed Avalanche Energy (Note 2) EAS 270 mJ Repetitive Avalanche Energy (Note 1) EAR 8.6 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 20 V/ns Drain Power Dissipation Tc=25 ℃ PD 37.9 W Derate above 25 ℃ 0.30 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 3.3 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 62.5 ℃/W PIN CONNECTION |
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