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AP4P013LEP 데이터시트(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP4P013LEP 데이터시트(HTML) 3 Page - Advanced Power Electronics Corp. |
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3 / 6 page ![]() AP4P013LEP Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3 0 50 100 150 200 024 68 10 -V DS , Drain-to-Source Voltage (V) T C =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0 20 40 60 80 100 120 02468 10 -V DS , Drain-to-Source Voltage (V) T C = 150 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 8 10 12 14 16 246 8 10 -V GS , Gate-to-Source Voltage (V) I D = -20 A T C =25 ℃ 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) I D = -30 A V G = - 10V 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) I D = - 250uA 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C . |
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