Data Sheet D14063EJ2V0DS

6

2SK3296

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

2)TO-262

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

(10)

4

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

3)TO-263 (MP-25ZK)

10.0±0.2

2.54

0.7±0.15

123

4

4.45±0.2

1.3±0.2

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.4

No plating

8.4 TYP.

0.025 to

0.25

0.25

4)TO-263 (MP-25ZJ)

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Remark The diode connected between the gate and source of the transistor

serves as a protector against ESD.

When this device actually used, an additional protection circuit is

externally required if a voltage exceeding the rated voltage may be

applied to this device.