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BAS240 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BAS240 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 2001 Feb 05 3 Philips Semiconductors Product specification Schottky barrier diode BAS240 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD110 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 1 mA 380 mV IF = 10 mA 500 mV IF =40mA 1 V IR reverse current VR = 30 V; note 1; see Fig.3 1 µA VR = 40 V; note 1; see Fig.3 10 µA Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.5 5 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 315 K/W |
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