2SC4793 datasheet(1/3 Pages) MCC

부품명	2SC4793

상세설명	NPN Silicon Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

제조업체	MCC [Micro Commercial Components]

홈페이지	http://www.mccsemi.com

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1 / 3 page

2SC4793

NPN Silicon

Power Transistors

Features

Maximum Ratings

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

230

V

VCBO

Collector-Base

Voltage

230

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current

1.0

A

IB

Base Current

0.1

A

PCM

Collector power dissipation

Ta=25

OC

Tc=25

OC

2.0

20

W

TJ

Junction Temperature

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

omponents

20736 Marilla Street Chatsworth

!"#

$% !"#

Revision:

B

20

17/07/27

A

N

M

P

Q H

J

B

D

C

E

F

K

G

TO-220F

1 2

3

PIN 1.

BASE

PIN 2.

COLLECTOR

PIN 3.

EMITTER

www.mccsemi.com

1 of 3

Micro Commercial Components

M C C

R

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

•

Complementary to 2SA1837

-55 to +150

DIMENSIONS

INCHES

MM

DIM

MAX

MIN

MAX

MIN

NOTE

.392

A

.408

9.96

10.36

Φ

C

.106

2.70

D

.583

.598

14.80

15.20

F

.1

02

.1

57

2.60

4.00

H

.020

0.75

0.50

.030

M

.169

.185

4.30

4.70

N

.110

.126

2.80

3.20

Q

.020

0.75

.030

0.50

B.138

3.50

E

.520

13.20

G

.100

2.54

J

.043

.053

1.10

1.35

P

.0

79

.114

2.

00

2.90

Collector power dissipation

1.5

W

PC

Symbol

Parameter

Min

Typ

Max

Units

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=0.1mAdc, IE=0)

230

---

Vdc

ICBO

Collector-Base Cutoff Current

(VCB=230Vdc,IE=0)

---

10

µAdc

IEBO

Emitter-Base Cutoff Current

(VEB=5.0Vdc, IC=0)

---

10

µAdc

hFE

Forward Current Transfer ratio

(IC=100mAdc, VCE=5.0Vdc)

100

---

320

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=500mAdc, IB=50mAdc)

---

1.5

Vdc

fT

Transition Frequency

(VCE=10Vdc, IC=100mAdc)

30

---

MHz

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=1mAdc, IB=0)

230

---

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(IE=100

µAdc, IC=0)

5.0

---

Vdc

유사한 부품 번호 - 2SC4793

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC4793	147Kb / 2P	NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SC4793	46Kb / 4P	NPN SILICON TRANSISTOR
Savantic, Inc.	2SC4793	246Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4793	44Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4793	166Kb / 4P	Silicon NPN Power Transistors

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유사한 설명 - 2SC4793

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD241	107Kb / 5P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BU426	129Kb / 6P	NPN SILICON POWER TRANSISTORS
Inchange Semiconductor ...	S2055A	40Kb / 3P	Silicon NPN Power Transistors
	2SC3182N	168Kb / 4P	Silicon NPN Power Transistors
	2SC4690	85Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC2497	107Kb / 3P	Silicon NPN Power Transistors
	2SC2517	104Kb / 3P	Silicon NPN Power Transistors
	2SC2562	143Kb / 5P	Silicon NPN Power Transistors
	2SC2577	136Kb / 3P	Silicon NPN Power Transistors

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2SC4793 데이터시트(PDF) 1 Page - Micro Commercial Components

2SC4793 데이터시트(HTML) 1 Page - Micro Commercial Components

유사한 부품 번호 - 2SC4793

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