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BC557B 데이터시트(PDF) 2 Page - Micro Commercial Components

부품명 BC557B
상세설명  PNP Silicon Amplifier Transistor 625mW
PDF  5 Pages
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제조업체  MCC [Micro Commercial Components]
홈페이지  http://www.mccsemi.com
Logo MCC - Micro Commercial Components

BC557B 데이터시트(HTML) 2 Page - Micro Commercial Components

  BC557B Datasheet HTML 1Page - Micro Commercial Components BC557B Datasheet HTML 2Page - Micro Commercial Components BC557B Datasheet HTML 3Page - Micro Commercial Components BC557B Datasheet HTML 4Page - Micro Commercial Components BC557B Datasheet HTML 5Page - Micro Commercial Components  
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MCC
Revision: E
2014/12/15
TM
Micro Commercial Components
www.mccsemi.com
2 of 5
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
BC556
-80
BC557
-50
Collector-base
breakdown voltage
BC558
V(BR)CBO
IC= -0.1mA,IE=0
-30
V
BC556
-65
BC557
-45
Collector-emitter
breakdown voltage
BC558
V(BR)CEO
IC=-2mA,IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
BC556
VCB=-70V,IE=0
-0.1
μA
BC557
VCB=-45V,IE=0
-0.1
μA
Collector cut-off current
BC558
ICBO
VCB=-25V,IE=0
-0.1
μA
BC556
VCE=-60V,IB=0
-0.1
μA
BC557
VCE=-40V,IB=0
-0.1
μA
Collector cut-off current
BC558
ICEO
VCE=-25V,IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
*
VCE=-5V, IC=-2mA
120
800
IC=-10mA,IB=-0.5mA
-0.3
V
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB=-5mA
-0.65
V
IC=-10mA,IB=-0.5mA
-0.8
V
Base-emitter saturation voltage
VBE(sat)
IC=-100mA,IB=-5mA
-1
V
VCE=-5V, IC=-2mA
-0.55
-0.7
V
Base-emitter voltage
VBE
VCE=-5V, IC=-10mA
-0.82
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
6
pF
BC556
150
MHz
BC557
150
MHz
Transition frequency
BC558
fT
VCE=-5V,IC=-10mA, f=100MHz
150
MHz
CLASSIFICATION of hFE
RANK
A
B
C
RANGE
120-220
180-460
420-800



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