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RN4607 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 RN4607
상세설명  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
PDF  5 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4607 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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RN4607
2001-06-05
3
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = −50V, IE = 0
―
―
−100
Collector cut-off current
ICEO
―
VCE = −50V, IB = 0
―
―
−500
nA
Emitter cut-off current
IEBO
―
VEB = −6V, IC = 0
−0.081
―
−0.15
mA
DC current gain
hFE
―
VCE = −5V, IC = −10mA
80
―
―
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = −5mA, IB = −0.25mA
―
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
―
VCE = −0.2V, IC = −5mA
−0.7
―
−1.8
V
Input voltage (OFF)
VI (OFF)
―
VCE = −5V, IC = −0.1mA
−0.5
―
−0.8
V
Transition frequency
fT
―
VCE = −10V, IC = −5mA
―
200
―
MHz
Collector output capacitance
Cob
―
VCB = −10V, IE = 0
―
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = 50V, IE = 0
―
―
100
Collector cut-off current
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
Emitter cut-off current
IEBO
―
VEB = 6V, IC = 0
0.081
―
0.15
mA
DC current gain
hFE
―
VCE = 5V, IC = 10mA
80
―
―
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
Input voltage (ON)
VI (ON)
―
VCE = 0.2V, IC = 5mA
0.7
―
1.8
V
Input voltage (OFF)
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
0.8
V
Transition frequency
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output capacitance
Cob
―
VCB = 10V, IE = 0, f = 1 MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
7
10
13
kΩ
Resistor ratio
R1/R2
―
―
0.191
0.213
0.232
―



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