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ML1350 데이터시트(PDF) 2 Page - LANSDALE Semiconductor Inc. |
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ML1350 데이터시트(HTML) 2 Page - LANSDALE Semiconductor Inc. |
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2 / 6 page ![]() www.lansdale.com Page 2 of 6 Issue A LANSDALE Semiconductor, Inc. ML1350 ELECTRICAL CHARACTERISTICS (V+ = +12 Vdc, TA = +25°C, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit AGC Range, 45 MHz (5.0 V to 7.0 V) (Figure 1) 60 68 – dB Power Gain (Pin 5 grounded via a 5.1 kΩ resistor) f = 58 MHz, BW = 4.5 MHz See Figure 6(a) f = 45 MHz, BW = 4.5 MHz See Figure 6(a), (b) f = 10.7 MHz, BW = 350 kHz See Figure 7 f = 455 kHz, BW = 20 kHz Ap – 46 – – 48 50 58 62 – – – – dB Maximum Differential Voltage Swing 0 dB AGC –30 dB AGC VO – – 20 8.0 – – Vpp Output Stage Current (Pins 1 and 8) I1 + I8 – 5.6 – mA Total Supply Current (Pins 1, 2 and 8) IS – 14 17 mAdc Power Dissipation PD – 168 204 mW DESIGN PARAMETERS, Typical Values (V+ = +12 Vdc, TA = +25°C, unless otherwise noted.) Frequency Parameter Symbol 455 kHz 10.7 MHz 45 MHz 58 MHz Unit Single–Ended Input Admittance g11 b11 0.31 0.022 0.36 0.50 0.39 2.30 0.5 2.75 mmho Input Admittance Variations with AGC (0 dB to 60 dB) ∆g11 ∆b11 – – – – 60 0 – – µmho Differential Output Admittance g22 b22 4.0 3.0 4.4 110 30 390 60 510 µmho Output Admittance Variations with AGC (0 dB to 60 dB) ∆g22 ∆b22 – – – – 4.0 90 – – µmho Reverse Transfer Admittance (Magnitude) |y12| < < 1.0 < < 1.0 < < 1.0 < < 1.0 µmho Forward Transfer Admittance Magnitude Angle (0 dB AGC) Angle (–30 dB AGC) |y21| < y21 < y21 160 –5.0 –3.0 160 –20 –18 200 –80 –69 180 –105 –90 mmho Degrees Degrees Single–Ended Input Capacitance Cin 7.2 7.2 7.4 7.6 pF Differential Output Capacitance CO 1.2 1.2 1.3 1.6 pF Figure 2. Typical Gain Reduction Figure 3. Noise Figure versus Gain Reduction 4.0 5.0 6.0 7.0 VAGC, SUPPLY VOLTAGE (V) IAGC = 0.2 mA 0 10 20 30 40 GAIN REDUCTION (dB) 45 MHz 58 MHz IAGC = 0.1 mA (Figures 6 and 7) (Figure 6) 0 20 40 60 80 22 20 18 16 14 12 10 8.0 6.0 |
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