DMTH10H005SCT

Document number: DS39468 Rev. 2 - 2

2 of 6

www.diodes.com

June 2017

© Diodes Incorporated

DMTH10H005SCT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Continuous Drain Current

140

99

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

400

A

Maximum Continuous Body Diode Forward Current

100

A

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

400

A

Avalanche Current, L = 3mH (Note 7)

19

A

Avalanche Energy, L = 3mH (Note 7)

542

mJ

Avalanche Current, L = 0.1mH

25

A

Avalanche Energy, L = 0.1mH

31.2

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

2.9

W

Thermal Resistance, Junction to Ambient (Note 5)

51

°C/W

Total Power Dissipation

187

W

Thermal Resistance, Junction to Case

0.8

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

100

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

3.8

5

m

Ω

Diode Forward Voltage

—

—

1.3

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

8,474

—

pF

f = 1MHz

Output Capacitance

—

1,608

—

Reverse Transfer Capacitance

—

78

—

Gate Resistance

—

0.41

—

Ω

Total Gate Charge

—

111.7

—

nC



Gate-Source Charge

—

28.9

—

Gate-Drain Charge

—

21.3

—

Turn-On Delay Time

—

29.9

—

ns

Turn-On Rise Time

—

30.3

—

Turn-Off Delay Time

—

79.7

—

Turn-Off Fall Time

—

41.6

—

Reverse Recovery Time

—

70

—

ns

Reverse Recovery Charge

—

181

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.