2N7002K

A

N-Channel MOSFET

Features

Unit

Drain-source Voltage

60

V

Drain Current

340

mA

Total Power Dissipation

350

mW

Operating Junction Temperature

-55 to +150

Storage Temperature

-55 to +150

SOT-23

Suggested Solder

Pad Layout

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.110

.120

2.80

3.04

C

.047

.055

1.20

1.40

D

.035

.041

.89

1.03

E

.070

.081

1.78

2.05

F

.018

.024

.45

.60

G

.0005

.0039

.013

.100

H

.035

.044

.89

1.12

J

.003

.007

.085

.180

K

.015

.020

.37

.51

A

B

C

D

E

F

G

H

J

.079

2.000

inches

mm

.031

.800

.035

.900

.037

.950

.037

.950

K

2

3

1

1.GATE

2. SOURCE

3. DRAIN

omponents

20736 Marilla

Street Chatsworth



 !"#

$%    !"#

Revision: A

2017/04/14

1 of

4

•

•

Voltage controlled small signal switch

•

Rugged and reliable

•

ESD Protected up to 2

.5KV (HBM)

Symbol

Rating

Rating

• Halogen free available upon request by adding suffix "-HF"

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

B

.083

.104

2.10

2.64

Thermal Resistance fromJunction to Ambient

357

/W

Gate-source Voltage

V

Micro Commercial Components

M C C

R

±20

Equivalent circuit