BAP70-05 datasheet(3/7 Pages) PHILIPS

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9397 750 12811

Product data sheet

Rev. 01 — 5 April 2004

3 of 7

Philips Semiconductors

BAP70-05

Silicon PIN diode

diode forward resistance

f = 100 MHz; see Figure 2

IF = 0.5 mA

100

Ω

IF = 1 mA

Ω

IF =10mA

5.4

Ω

IF = 100 mA

1.4

1.9

Ω

τL

charge carrier life time

when switched from IF = 10 mA to

IR = 6 mA; RL = 100 Ω; measured

at IR =3mA

1.25

µs

series inductance

IF = 100 mA; f = 100 MHz

1.4

Table 6:

Electrical characteristics …continued

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

f = 1 MHz; Tj =25 °C.

f = 100 MHz; Tj =25 °C.

Fig 1.

Diode capacitance as a function of reverse

voltage; typical values.

Fig 2.

Diode forward resistance as a function of

forward current; typical values.

VR (V)

020

510

001aaa519

200

400

600

(fF)

IF (mA)

10−1

102

mcd769

102

(

Ω)

10−1

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