| 전자부품 데이터시트 검색엔진 |
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IXTP01N100 데이터시트(PDF) 1 Page - IXYS Corporation |
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IXTP01N100 데이터시트(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1000 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 1000 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C;T J = 25°C to 150°C 100 mA I DM T C = 25 °C, pulse width limited by T J 400 mA P D T C = 25 °C25 W T A = 25 °C 1.1 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in.) from case for 10 s 300 °C Weight 1 g High Voltage MOSFET D (TAB) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = -10 V, I D = 25 µA 1000 V V GS(off) V DS = 25V, I D = 25 µA -2.5 -5 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS(off) V DS = V DSS, VGS = -10 V T J = 25°C10 µA T J = 125°C 250 µA R DS(on) V GS = 0 V, I D = 50 mA Note 1 90 110 Ω I D(on) V GS = 0 V, V DS = 50V Note 1 250 mA 98809A (12/01) G D S TO-220AB (IXTP) © 2001 IXYS All rights reserved N-Channel, Depletion Mode IXTP 01N100D V DSS = 1000 V I D25 = 100 mA R DS(on) = 110 Ω Ω Ω Ω Ω Features l Normally ON mode l Low R DS (on) HDMOS TM process l Ruggedpolysilicongatecellstructure l Fast switching speed Applications l Levelshifting l Triggers l Solid state relays l Currentregulators |
유사한 부품 번호 - IXTP01N100 |
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유사한 설명 - IXTP01N100 |
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