| 전자부품 데이터시트 검색엔진 |
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SFH4860 데이터시트(PDF) 2 Page - OSRAM GmbH |
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SFH4860 데이터시트(HTML) 2 Page - OSRAM GmbH |
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2 / 9 page ![]() 2015-12-23 2 Version 1.3 SFH 4860 Maximum Ratings (TA = 25 °C) Characteristics (TA = 25 °C) Parameter Symbol Values Unit Operation and storage temperature range T op; Tstg -40 ... 100 °C Junction temperature T j 125 °C Reverse voltage V R 3 V Forward current I F 50 mA Surge current (tp ≤ 10 µs, D = 0) I FSM 1 A Power consumption Ptot 140 mW Thermal resistance junction - ambient RthJA 450 K / W Thermal resistance junction - case RthJC 160 K / W Parameter Symbol Values Unit Peak wavelength (I F = 50 mA, tP = 20 ms) (typ) λpeak 660 nm Spectral bandwidth at 50% of I max (I F = 50 mA, tp = 20 ms) (typ) ∆λ 25 nm Half angle (typ) ϕ ± 50 ° Dimensions of active chip area (typ) L x W 0.325 x 0.325 mm x mm Rise and fall time of Ie ( 10% and 90% of Ie max) (IF = 50 mA, RL = 50 Ω) (typ) tr, tf 100 ns Capacitance (V R = 0 V, f = 1 MHz) (typ) C 0 25 pF Forward voltage (IF = 50 mA, tP = 20 ms) (typ (max)) V F 2 (≤ 2.8) V Reverse current (VR = 3 V) IR 0.01 (≤ 10) µA Total radiant flux (I F=50 mA, tp=20 ms) (typ) Φe 3 mW Temperature coefficient of I e or Φe (I F = 50 mA, tp = 20 ms) (typ) TC I -0.4 % / K Temperature coefficient of V F (IF = 50 mA, tp = 20 ms) (typ) TC V -3 mV / K Temperature coefficient of wavelength (IF = 50 mA, tp = 20 ms) (typ) TCλ 0.16 nm / K |
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