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CYUSB303X 데이터시트(PDF) 28 Page - Cypress Semiconductor |
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CYUSB303X 데이터시트(HTML) 28 Page - Cypress Semiconductor |
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28 / 54 page ![]() CYUSB303X Document Number: 001-84160 Rev. *G Page 28 of 54 Figure 16. Non-multiplexed Asynchronous SRAM Write Timing (WE# and CE# Controlled) Figure 17. Non-multiplexed Asynchronous SRAM Write Timing (WE# Controlled, OE# LOW) Write Cycle 2 CE# Controlled, OE# High During Write tWC tCW tAW tAS tAH tDS tDH tWHZ VALID DATA ADDRESS DATA I/O tWP CE# WE# OE# Write Cycle 1 WE# Controlled, OE# High During Write tWPH VALID DATA tWC tCW tAW tAS tAH tDS tDH tWHZ VALID DATA ADDRESS DATA I/O tWP CE# WE# OE# tCPH VALID DATA tWC tCW tAW tAS tAH tDS tDH VALID DATA CE# WE# DATA I/O tWP tOW tWHZ Write Cycle 3 WE# Controlled. OE# Low Note : tWP must be adjusted such that tWP > tWHZ + tDS |
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