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AC857CWQ 데이터시트(PDF) 2 Page - Diodes Incorporated |
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AC857CWQ 데이터시트(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() AC857CWQ Document Number: DS39667 Rev. 1 - 2 2 of 5 www.diodes.com September 2017 © Diodes Incorporated AC857CWQ Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V Continuous Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 200 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 625 C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 - - V IC = -100nA Collector-Emitter Breakdown Voltage (Note 7) BVCEO -45 - - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -5 - - V IE = -100nA DC Current Gain (Note 7) hFE 420 520 800 - VCE = -5.0V, IC = -2.0mA Collector Cutoff Current ICBO - - -15 nA VCB = -30V -4 µA VCB = -30V, TA = +150°C Collector-Emitter Saturation Voltage (Note 7) VCE(sat) - -75 -300 mV IC = -10mA, IB = -0.5mA -250 -650 IC = -100mA, IB = -5.0mA Base-Emitter Turn-On Voltage (Note 7) VBE(on) -600 -650 -750 mV IC = -2mA, VCE = -5V - - -820 IC = -10mA, VCE = -5V Base-Emitter Saturation Voltage (Note 7) VBE(sat) - -700 - mV IC = -10mA, IB = -0.5mA -850 -950 IC = -100mA, IB = -5mA Output Capacitance Cobo - 3 4.5 pF VCB = -10V, f = 1.0MHz Transition Frequency fT 100 200 - MHz VCE = -5V, IC = -10mA, f = 100MHz Noise Figure NF - - 10 dB VCE = -5V, IC = -200µA RS = 2kΩ, f = 1kHz ∆f = 200Hz Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7 . Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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