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BC846ASQ 데이터시트(PDF) 3 Page - Diodes Incorporated |
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BC846ASQ 데이터시트(HTML) 3 Page - Diodes Incorporated |
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3 / 7 page ![]() BC846ASQ Document number: DS39270 Rev. 2 - 2 3 of 7 www.diodes.com October 2017 © Diodes Incorporated BC846ASQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 10μA Collector-Emitter Breakdown Voltage BVCEO 65 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 1μA DC Current Gain hFE 110 — 220 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) — — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(ON) 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current ICES ICBO ICBO — — — — — — 15 15 5.0 nA nA µA VCE = 80V VCB = 40V VCB = 30V, TA = +150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCB — 2 — pF VCB = 10V, f = 1.0MHz Note: 8. For Short duration pulse test used to minimize self-heating effect. |
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