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BC847AT 데이터시트(PDF) 3 Page - Diodes Incorporated

부품명 BC847AT
상세설명  45V NPN SMALL SIGNAL TRANSISTOR
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BC847AT 데이터시트(HTML) 3 Page - Diodes Incorporated

  BC847AT Datasheet HTML 1Page - Diodes Incorporated BC847AT Datasheet HTML 2Page - Diodes Incorporated BC847AT Datasheet HTML 3Page - Diodes Incorporated BC847AT Datasheet HTML 4Page - Diodes Incorporated BC847AT Datasheet HTML 5Page - Diodes Incorporated BC847AT Datasheet HTML 6Page - Diodes Incorporated  
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BC847AT, BT, CT
Document number: DS30274 Rev. 10 - 2
3 of 6
www.diodes.com
September 2016
© Diodes Incorporated
BC847AT, BT, CT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BVCBO
50

V
IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
45

V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6.0

V
IE = 10µA, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain
Current Gain A
B
C
hFE
110
200
420

290
520
220
450
800
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
VCE(SAT)
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
Base-Emitter Saturation Voltage
VBE(SAT)

700
900
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
Base-Emitter Voltage
VBE
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Emitter Cutoff Current
ICBO
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = +150°C
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
4.5
pF
VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 5V, IC = 10 A,
f = 100MHz
Noise Figure
BC847BT
BC847CT
NF
1.0
4.0
dB
VCE = 5V, RS = 2kΩ,
f = 1MHz, BW = 200Hz
Note:
7.
Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.



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