DMTH6016LSD-13 datasheet(2/7 Pages) DIODES

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DMTH6016LSD

Document number: DS38549 Rev. 3 - 2

2 of 7

www.diodes.com

January 2017

DMTH6016LSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +100°C

7.6

5.4

Continuous Drain Current (Note 6) VGS = 4.5V

TA = +25°C

TA = +100°C

6.2

4.4

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current

1.7

Pulsed Body Diode Forward Current (10

μs pulse, duty cycle = 1%)

ISM

Avalanche Current, L = 0.1mH

IAS

15.3

Avalanche Energy, L = 0.1mH

EAS

11.7

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.4

Thermal Resistance, Junction to Ambient (Note 5)

RJA

103

°C/W

Total Power Dissipation (Note 6)

1.9

Thermal Resistance, Junction to Ambient (Note 6)

RJA

°C/W

Thermal Resistance, Junction to Case

RJC

14.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

—

2.5

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

19.5

VGS = 10V, ID = 10A

—

VGS = 4.5V, ID = 6A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

864

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

282

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

1.3

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

8.4

—



VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

Qgs

—

3.1

—

Gate-Drain Charge

Qgd

—

4.3

—

Turn-On Delay Time

tD(ON)

—

3.4

—

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

—

5.2

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

Reverse Recovery Time

tRR

—

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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