DG534AAPSLASH883 datasheet(4/16 Pages) VISHAY

4 / 16 page

DG534A/538A

Vishay Siliconix

www.vishay.com

Document Number: 70069

S-05734—Rev. G, 29-Jan-02

ABSOLUTE MAXIMUM RATINGS

V+ to GND

–0.3 V to +21 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

V+ to V––0.3 V to +21 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

V– to GND

–10 V to +0.3 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0 V to (V+) + 0.3 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Digital Inputs

(V–) –0.3 V to (VL) + 0.3 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

or 20 mA, whichever occurs first

VS, VD

(V–) –0.3 V to (V–) + 14 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

or 20 mA, whichever occurs first

Current (any terminal) Continuous

20 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Current(S or D) Pulsed l ms 10% Duty

40 mA

. . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature

(A Suffix)

–65 to 150

. . . . . . . . . . . . . . . . . . .

(D Suffix)

–65 to 125

. . . . . . . . . . . . . . . . . . .

Power Dissipation (Package)a

Plastic DIPb

625 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PLCCc

450 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Sidebrazed

1200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notes:

All leads soldered or welded to PC board.

Derate 8.3 mW/

_C above 75_C.

Derate 6 mW/

_C above 75_C.

Derate 16 mW/

_C above 75_C.

SPECIFICATIONSa

Test Conditions

Unless Otherwise Specified

A Suffix

–55 to 125

D Suffix

–40 to 85

Parameter

Symbol

V+ = 15 V, V– = –3 V, VL = 5 V

WR = 0.8 V, RS, EN= 2 V

Tempb

Typc

Mind

Maxd

Mind

Maxd

Unit

Analog Switch

Analog Signal Rangeg

VANALOG

V– = –5 V

Full

–5

Drain-Source

On-Resistance

rDS(on)

IS = –10 mA, VS = 0 V

Room

Full

120

Resistance Match

Between Channels

DrDS(on)

VAIL = 0.8 V, VAIH = 2 V

Sequence Each Switch On

Room

Source Off

Leakage Current

IS(off)

VS = 8 V, VD = 0 V, EN = 0.8 V

Room

Full

0.05

–5

–50

–5

–50

Drain Off

Leakage Current

ID(off)

VS = 0 V, VD = 8 V, EN = 0.8 V

Room

Full

0.1

–20

–500

500

–20

–100

100

Drain On

Leakage Current

ID(on)

VS = VD = 8 V

Room

Full

0.1

–20

–1000

1000

–20

–200

200

Digital Control

Input Voltage High

VAIH

Full

Input Voltage Low

VAIL

Full

0.8

Address Input Current

IAI

VAI = 0 V, or 2 V or 5 V

Room

Full

–0.1

–1

–10

–1

–10

VAO = 2.7 V

Room

–21

–2.5

Address Output Current

IAO

VAO = 0.4 V

Room

3.5

2.5

Dynamic Characteristics

On State Input

PLCC

Room

On State Input

Capacitanceg

CS(on)

See Figure 11

DIP

Room

Off State Input

PLCC

Room

Off State Input

Capacitanceg

CS(off)

DIP

Room

Off State Output

See Figure 12

PLCC

Room

Off State Output

Capacitanceg

CD(off)

DIP

Room

Transition Time

tTRANS

Room

Full

160

300

500

300

500

Break-Before-Make

Interval

tOPEN

See Figure 4

Room

Full

EN, WR Turn On Time

tON

See Figure 2 and 3

Room

Full

150

300

500

300

500

EN, Turn Off Time

tOFF

See Figure 2

Room

Full

105

175

300

175

300

Charge Injection

See Figure 5

Room

–70

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