14A

-65° to +150°C

300°C

-40°C to +85°C

-40°C to +125°C

+150°C

V+ = 80V

V+ = 80V

V+ = 80V

di/dt<100A/us, VDD<25V

+VDD=15V

+VCC=15V

+VCC=15V

+VDD

OUTPUT CHARACTERISTICS

Leakage Current (Each MOSFET)

Reverse Recovery Time

BODY DIODE CHARACTERISTICS

BIAS SUPPLY CHARACTERISTICS

+VDD Bias Current

INPUT SIGNAL CHARACTERISTICS

Positive Trigger Threshold Voltage

Negative Trigger Threshold Voltage

Under-voltage Lockout

+VCC Bias Current

+VB Bias Current

Logic Input Current

Switching Loss Inductive Load

+VCC=15V

+VB=15V

All Inputs

High Voltage Supply

Logic Supply

Logic Input Voltage

Logic Input Current

Lowside Supply

Highside Supply

Continuous Output Current

Thermal Resistance @ 125°C

(Output Switches,Junction to Case)

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

Industrial grade devices shall be tested to subgroups 1 unless otherwise specified.

Space and Military grade devices ("KE & HE" suffix) shall be 100% tested to subgroups 1, 2 and 3.

Subgroups 5 and 6 testing available upon request.

Subgroup 1, 4 TA=TC=+25°C

2, 5 TA=TC=+125°C

3, 6 TA=TC=-40°C for 'KE' and 'HE' SUFFIXES

See UVLO paragraph in the application notes section.

Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.

Pre and post irradiation limits at 25°C, up to 300Krad TID, are identical unless otherwise specified.

When applying power to the device, apply the low voltage followed by the high voltage or alternatively,apply both at the same time.

Do not apply high voltage without low voltage present.

Internal solder reflow temperature is 180°C, do not exceed.

Peak Output Current

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK4304RH

MSK4304KE/HE RH

Junction Temperature

2

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL SPECIFICATIONS

Parameters

MSK4304KE/HE RH

Min. Typ. Max.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0.8

8.0

-

-10

-

-

0.08

0.16

0.08

1.5

2.4

1.2

25

250

25

370

1.2

250

850

2

6

2

6

9

3.0

-

12.0

75

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0.8

8.0

-

-10

-

-

-

-

-

0.8

-

-

1

-

-

-

-

-

-

0.02

-

0.02

-

4.5

2.3

1.8

10

25

-1.2

TBD

TBD

0.08

-

-

1.6

-

-

25

-

-

370

1.2

250

850

2

6

2

6

9

3.0

-

12.0

75

-

-

-

MSK4304RH

Min. Typ. Max.

1

2

3

1

2

3

1

2

3

-

1

1

1

1,3

2

1,3

2

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

1,2,3

4

4

-

-

-

0.8

1.4

0.6

1

10

1

-

-

-

-

0.02

-

0.02

-

4.5

2.3

1.8

10

25

-1.2

TBD

TBD

Ω

Ω

Ω

volts

volts

volts

μA

μA

μA

nS

V

ns

nC

mA

mA

mA

mA

mA

volts

volts

volts

μA

μA

μJ

μJ

3

GROUP A

SUBGROUP

5

Test Conditions

NOTES:

TsT

TLD

TC

TJ

V+

+VDD

+VCC

+VB

100V

18V

10mA

18V

18V

10A

2.5°C/W

UNITS

2

Drain-Source ON Resistance

(each MOSFET) (for thermal calculations only)

Drain-Source Voltage (VDS(on))

(each MOSFET)

1

1

2

3

4

5

6

7

8

9

10

9

1

8

1

1

7

1

1

1

E(ON)

E(OFF)

1

6

10

8548-35 Rev. J 8/14