IRFPS37N50APBF. datasheet(1/9 Pages) VISHAY

부품명	IRFPS37N50APBF.

상세설명	Power MOSFET

PDF	9 Pages

Scroll/Zoom	100%

제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

Logo

1 / 9 page

Document Number: 91258

www.vishay.com

S11-0111-Rev. C, 07-Feb-11

1

Power MOSFET

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective Coss Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge Converters

• Power Factor Correction Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 1.94 mH, Rg = 25 , IAS = 36 A (see fig. 12).

c. ISD  36 A, dI/dt  145 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (Max.) ()VGS = 10 V

0.13

Qg (Max.) (nC)

180

Qgs (nC)

46

Qgd (nC)

71

Configuration

Single

N-Channel MOSFET

G

D

S

D

G

Super-247

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Super-247

Lead (Pb)-free

IRFPS37N50APbF

SiHFPS37N50A-E3

SnPb

IRFPS37N50A

SiHFPS37N50A

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

36

A

TC = 100 °C

23

Pulsed Drain Currenta

IDM

144

Linear Derating Factor

3.6

W/°C

Single Pulse Avalanche Energyb

EAS

1260

mJ

Repetitive Avalanche Currenta

IAR

36

A

Repetitive Avalanche Energya

EAR

44

mJ

Maximum Power Dissipation

TC = 25 °C

PD

446

W

Peak Diode Recovery dV/dtc

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

* Pb containing terminations are not RoHS compliant, exemptions may apply

유사한 부품 번호 - IRFPS37N50APBF.

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRFPS37N50APBF	147Kb / 9P	HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13廓 , ID = 36A )
Vishay Siliconix	IRFPS37N50APBF	156Kb / 8P	Power MOSFET 21-Jul-08

More results

유사한 설명 - IRFPS37N50APBF.

제조업체	부품명	데이터시트	상세설명
AUK corp	STK730P	398Kb / 8P	Power MOSFET
Torex Semiconductor	XP131A1145SR	427Kb / 5P	Power MOSFET
	XP131A1715SR	439Kb / 5P	Power MOSFET
	XP132A1635SR	447Kb / 5P	Power MOSFET
Vishay Siliconix	IRF9Z14S	2Mb / 8P	Power MOSFET 02-Jun-08
	IRF630	579Kb / 8P	Power MOSFET 21-Mar-11
	IRF634N	162Kb / 8P	Power MOSFET 19-Jun-08
	IRF710	1,019Kb / 8P	Power MOSFET 30-May-08
ON Semiconductor	NTMS4937N	142Kb / 5P	Power MOSFET Power MOSFET September, 2009 ??Rev. 0
ON Semiconductor	NTP35N15G	161Kb / 7P	Power MOSFET Power MOSFET May, 2010 ??Rev. 4

More results

IRFPS37N50APBF. 데이터시트(PDF) 1 Page - Vishay Siliconix

IRFPS37N50APBF. 데이터시트(HTML) 1 Page - Vishay Siliconix

유사한 부품 번호 - IRFPS37N50APBF.

유사한 설명 - IRFPS37N50APBF.

Html Pages

1 2 3 4 5 6 7 8 9

데이터시트 다운로드

링크 URL