BGA2011 datasheet(3/12 Pages) PHILIPS

3 / 12 page

2000 Dec 04

Philips Semiconductors

Product speciﬁcation

900 MHz high linear low noise ampliﬁer

BGA2011

THERMAL CHARACTERISTICS

CHARACTERISTICS

RF input AC coupled; VS =3V; IS = 15 mA; f = 900 MHz; Tj =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction

to solder point

Ptot = 135 mW; Ts ≤ 100 °C

350

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply current

control current

−

0.11

−

RLIN

return losses input

typical application; see Fig.2

−−11

−

high IP3 (see Fig.2; stripline = 0 mm)

−−11

−

high IP3 (see Fig.2; stripline = 1.5 mm)

−−17

−

RL OUT

return losses output

typical application; see Fig.2

−−11

−

high IP3 (see Fig.2; stripline = 0 mm)

−−12

−

high IP3 (see Fig.2; stripline = 1.5 mm)

−−14

−

|s21|2

insertion power gain

typical application; see Fig.2

−

high IP3 (see Fig.2; stripline = 0 mm)

−

high IP3 (see Fig.2; stripline = 1.5 mm)

−

noise ﬁgure

typical application; see Fig.2;

IS =15mA

−

1.5

−

high IP3 (see Fig.2; stripline = 0 mm)

−

1.6

−

high IP3 (see Fig.2; stripline = 1.5 mm)

−

1.7

−

IP3in

input intercept point

typical application; see Fig.2

−−2

−

dBm

high IP3 (see Fig.2; stripline = 0 mm)

−

dBm

high IP3 (see Fig.2; stripline = 1.5 mm)

−

dBm

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