IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH1N250

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.0

1.8

mS

C

iss

1660

pF

C

oss

V

77

pF

C

rss

23

pF

t

d(on)

69

ns

t

r

25

ns

t

d(off)

132

ns

t

f

39

ns

Q

g(on)

41

nC

Q

gs

V

8

nC

Q

gd

16

nC

R

thJC

0.50

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

1.5

A

I

SM

Repetitive, Pulse Width Limited by T

JM

6

A

V

SD

I

1.5

V

t

rr

I

2.5

μs

Resistive Switching Times

V

R

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

e

∅ P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain

3 - Source

Note

1. Pulse test, t

*Additional provisions for lead to lead voltage isolation are required at V