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AM29PL320DB70RWPI 데이터시트(PDF) 46 Page - SPANSION

부품명 AM29PL320DB70RWPI
상세설명  32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
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AM29PL320DB70RWPI 데이터시트(HTML) 46 Page - SPANSION

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Am29PL320D
October 2, 2003
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all inputs except VCC. Test conditions: VCC = 3.0 V, one input at a time.
DATA RETENTION
* For reference only. BSC is an ANSI standard for Basic Space Centering.
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time, 96 and 128 KByte
sector
260
s
Excludes 00h programming
prior to erasure (Note 4)
Sector Erase Time, 8 and 16 KByte sector
0.5
60
Chip Erase Time
33.5
s
Word Programming Time
14.3
300
µs
Excludes system level
overhead (Note 5)
Double Word Programming Time
18.3
360
µs
Chip Programming Time
(Note 3)
Word Mode
28
84
s
Double Word
Mode
18
54
s
Description
Min
Max
Input voltage with respect to VSS on all inputs except I/O inputs
(including A9 and OE#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O inputs
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years



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