IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA05N100HV IXTA05N100

IXTP05N100

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

 300s, duty cycle, d  2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

0.55

0.93

S

C

iss

260

pF

C

oss

V

22

pF

C

rss

8

pF

t

d(on)

11

ns

t

r

19

ns

t

d(off)

40

ns

t

f

28

ns

Q

g(on)

7.8

nC

Q

gs

V

1.4

nC

Q

gd

4.1

nC

R

thJC

3.1

C/W

R

thCS

(TO-220)

0.50

C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

750 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

3

A

V

SD

I

1.5

V

t

rr

710

ns

Resistive Switching Times

V

R

I

V

Pins: 1 - Gate

2 - Drain

3 - Source

TO-220AB Outline

TO-263AA Outline

TO-263HV Outline

PIN: 1 - Gate

2 - Source

3 - Drain

PIN: 1 - Gate

2,4 - Source

3 - Drain