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HSMS-285P 데이터시트(PDF) 3 Page - Agilent(Hewlett-Packard)

부품명 HSMS-285P
상세설명  Surface Mount Zero Bias Schottky Detector Diodes
PDF  13 Pages
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제조업체  HP [Agilent(Hewlett-Packard)]
홈페이지  http://www.home.agilent.com
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HSMS-285P 데이터시트(HTML) 3 Page - Agilent(Hewlett-Packard)

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3
Equivalent Linear Circuit Model
HSMS-285x chip
SPICE Parameters
Parameter
Units
HSMS-285x
BV
V
3.8
CJ0
pF
0.18
EG
eV
0.69
IBV
A3 E -4
IS
A3 E-6
N
1.06
RS
Ω
25
PB (VJ)
V
0.35
PT (XTI)
2
M
0.5
Absolute Maximum Ratings, TC = +25
°C, Single Diode
Symbol
Parameter
Unit
Absolute Maximum[1]
SOT-23/143 SOT-323/363
PIV
Peak Inverse Voltage
V
2.0
2.0
TJ
Junction Temperature
°C
150
150
TSTG
Storage Temperature
°C
-65 to 150
-65 to 150
TOP
Operating Temperature
°C
-65 to 150
-65 to 150
θ
jc
Thermal Resistance[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C = +25°C, where TC is defined to be the temperature at the package
pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
Cj
Rj
RS
Rj =
8.33 X 10
-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)



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