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NCP705 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 NCP705
상세설명  LDO Voltage Regulator
PDF  20 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP705 데이터시트(HTML) 4 Page - ON Semiconductor

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NCP705
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4
Table 4. ELECTRICAL CHARACTERISTICS
−40
°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.5 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF unless
otherwise noted. Typical values are at TJ = +25°C. (Note 4)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
2.5
5.5
V
Output Voltage Range (Adjustable)
VOUT
0.8
5.5−
VDO
V
Undervoltage Lock−out
VIN rising
UVLO
1.2
1.6
1.9
V
Output Voltage Accuracy (Fixed)
VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 0 − 500 mA
VOUT
−2
+2
%
Reference Voltage
VREF
0.8
V
Reference Voltage Accuracy
IOUT = 10 mA
VREF
−2
+2
%
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 4.5 V, IOUT = 10 mA
VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 10 mA
RegLINE
550
750
mV/V
Load Regulation
IOUT = 0 mA to 500 mA
RegLOAD
12
mV/mA
Load Transient
IOUT = 1 mA to 500 mA or 500 mA to 1 mA in
1
ms, COUT = 1 mF
TranLOAD
±120
mV
Dropout Voltage (Note 5)
IOUT = 500 mA, VOUT(nom) = 2.8 V
VDO
230
350
mV
Output Current Limit
VOUT = 90% VOUT(nom)
NCP705
ICL
510
750
950
mA
NCP705E
(0
°C ≤ TJ ≤ 70°C)
600
750
950
Quiescent Current
IOUT = 0 mA
IQ
13
25
mA
Ground Current
IOUT = 500 mA
IGND
260
mA
Shutdown Current
VEN ≤ 0.4 V, TJ = +25°C
IDIS
0.12
mA
VEN ≤ 0 V, VIN = 2.0 to 4.5 V, TJ = −40 to +85°C
IDIS
0.55
2
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
0.9
0.4
V
EN Pin Input Current
VEN = 5.5 V
IEN
100
500
nA
ADJ Pin Current
VADJ = 0.8 V
1
nA
Turn−On Time
COUT = 1.0 mF, from assertion EN pin to 98%
VOUT(nom)
tON
150
ms
Power Supply Rejection Ratio
VIN = 3.8 V, VOUT = 2.8 V
(Fixed), IOUT = 500 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
73
71
56
dB
Output Noise Voltage
VOUT = 2.5 V (Fixed), VIN = 3.5 V, IOUT = 500 mA
f = 100 Hz to 100 kHz
VN
12
mVrms
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
−
20
−
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA
= 25
_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V.



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