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CDBJFSC8650-G 데이터시트(PDF) 2 Page - Comchip Technology

부품명 CDBJFSC8650-G
상세설명  Silicon Carbide Power Schottky Diode
PDF  3 Pages
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제조업체  COMCHIP [Comchip Technology]
홈페이지  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CDBJFSC8650-G 데이터시트(HTML) 2 Page - Comchip Technology

  CDBJFSC8650-G Datasheet HTML 1Page - Comchip Technology CDBJFSC8650-G Datasheet HTML 2Page - Comchip Technology CDBJFSC8650-G Datasheet HTML 3Page - Comchip Technology  
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Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Typ
Max
Unit
Typical Characteristics (
)
CDBJFSC8650-G
Page 2
pF
C
Total capacitance
Total capacitive charge
Forward voltage
VR = 0V , TJ = 25°C , f = 1 MHZ
µA
VR = 400V , TJ = 150°C
1.7
100
VF
IF = 8 A , TJ = 25°C
IF = 8 A , TJ = 175°C
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
IR
V
VR = 200V , TJ = 25°C , f = 1 MHZ
nC
1.45
Reverse Voltage, VR (V)
Fig.4 - Capacitance vs. Reverse Voltage
100
200
250
600
0
400
0.01
0.1
1
10
100
1000
Reverse current
QC = ∫
C(V) dv
VR
0
VR = 400V , TJ = 25°C , f = 1 MHZ
QC
1.75
56.5
560
10
15
30
54
QW-BSC12
REV:A
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Fig.2 - Reverse Characteristics
50
150
300
350
450
Reverse Voltage, VR (V)
0
0.04
0.09
0
200
400
800
0.05
0.07
100
300
600
500
700
0.01
0.06
0.08
0.02
Case Tempature, TC (°C)
Fig.1 - Forward Characteristics
Forward Voltage, VF (V)
0
1
4
2.0
0
1.6
2.4
0.4
2
3
5
1.2
0.8
6
7
Fig.3 - Current Derating
8
TJ=75°C
TJ=25°C
0.03
TJ=175°C
TJ=125°C
TJ=25°C
TJ=75°C
500
550
150
175
75
125
70
30
10
0
50
100
25
20
40
50
60
10% Duty
30% Duty
50% Duty
70% Duty
D.C.
Silicon Carbide Power Schottky Diode
TJ=125°C
TJ=25°C



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